2008
DOI: 10.1109/lpt.2008.924299
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Curved Waveguide Array Diode Lasers for High-Brightness Applications

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Cited by 5 publications
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“…3(a) and the output power up to 465 mW∕facet is achieved, which is one of the best reported results for high-brightness devices integrated with the phase shifter [14][15][16]. The threshold current is 390 mA and the external differential efficiency is 22%.…”
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confidence: 68%
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“…3(a) and the output power up to 465 mW∕facet is achieved, which is one of the best reported results for high-brightness devices integrated with the phase shifter [14][15][16]. The threshold current is 390 mA and the external differential efficiency is 22%.…”
mentioning
confidence: 68%
“…Superior to other phase shifters fabricated by facet coating and plate mounting [14,15], the integrated phase shifter in our device is easy to achieve technically, and it also reduces the bend loss in the curved waveguide arrays [16]. Although the carrier-induced variations of refractive index are avoided in the passive phase-shift region, the thermal effect generated by the absorption loss strongly affects the device performance.…”
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confidence: 98%
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“…Design of phase-locked diode laser arrays with integrated phase-shifters was firstly proposed by Ackley et al [10] and devices were experimentally achieved with an external phase-shift plate [11][12][13], or an integrated phaseshift facet coating [14]. A three-region design with curved waveguides as an integrated phase-shifter was reported to achieve the on-axis, diffraction-limited beam pattern, but only a low power in pulse mode was obtained [15]. Compared with structures mentioned above, we have developed a device which provided more effective phase-shift function with a simpler design, and achieved better results on high-brightness emission [16].…”
Section: Introductionmentioning
confidence: 99%