CuTe chains on Cu(111) by deposition of one-third of a monolayer of Te: Atomic and electronic structure

Kißlinger, Tilman; Raabgrund, Andreas; Geldiyev, B.; Ammon, Maximilian; Rieger, Janek; Hauner, Jonas; Hammer, Lutz; Fauster, Thomas; Schneider, M. Alexander

doi:10.1103/physrevb.102.155422

Cited by 8 publications

(3 citation statements)

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“…[12] On the other hand, Te has also been deposited on various metal surfaces, [15,[31][32][33] for instance, Au(111), Ag(111), and Cu(111). Although the strong interfacial interaction between Te and the metal substrates overcomes the Te─Te covalent bonds in the chains, enabling the growth of Te films with various lattice configurations [31] and even of Tebased alloys, [32,33] the synthesis of 𝛼-tellurene has not yet been achieved.…”

Section: Introductionmentioning

confidence: 99%

“…Such lattice configurations were caused by the highly anisotropic bonding nature of the Te crystal structure for which Te atoms prefer to crystallize along chains on an inert substrate, favoring the stronger Te─Te covalent bonds over the weak vdW-type interactions between the chains. [12] On the other hand, Te has also been deposited on various metal surfaces, [15,[31][32][33] for instance, Au(111), Ag(111), and Cu(111). Although the strong interfacial interaction between Te and the metal substrates overcomes the Te─Te covalent bonds in the chains, enabling the growth of Te films with various lattice configurations [31] and even of Tebased alloys, [32,33] the synthesis of 𝛼-tellurene has not yet been achieved.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Realization of Monolayer α‐Tellurene

Huang,

Xiong,

Hao

et al. 2023

Advanced Materials

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Abstract2D materials emerge as a versatile platform for developing next‐generation devices. The experimental realization of novel artificial 2D atomic crystals, which does not have bulk counterparts in nature, is still challenging and always requires new physical or chemical processes. Monolayer α‐tellurene is predicted to be a stable 2D allotrope of tellurium (Te), which has great potential for applications in high‐performance field‐effect transistors. However, the synthesis of monolayer α‐tellurene remains elusive because of its complex lattice configuration, in which the Te atoms are stacked in tri‐layers in an octahedral fashion. Here, a self‐assemble approach, using three atom‐long Te chains derived from the dynamic non‐equilibrium growth of an a‐Si:Te alloy as building blocks, is reported for the epitaxial growth of monolayer α‐tellurene on a Sb2Te3 substrate. By combining scanning tunneling microscopy/spectroscopy with density functional theory calculations, the surface morphology and electronic structure of monolayer α‐tellurene are revealed and the underlying growth mechanism is determined. The successful synthesis of monolayer α‐tellurene opens up the possibility for the application of this new single‐element 2D material in advanced electronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experimental Realization of Monolayer α‐Tellurene

Huang,

Xiong,

Hao

et al. 2023

Advanced Materials

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“…AgTe and AgSe display closed-packed atomic structures with a ( 3 × 3 ) structure. In addition, several metal monochalcogenide alloys show structures of chains, for example, Te on the Cu(111) system with ( 2 3 × 3 ) Cu–Te chains. − Recent angle-resolved photoemission spectroscopy (ARPES) measurements have reported that CuSe and AgTe possess two-dimensional Dirac nodal line fermions (its Dirac point extends along the M – Γ – K high symmetry line, forming the Dirac nodal line), protected by the mirror reflection symmetry. ,, Moreover, chalcogen-based surface alloys are also promising substrates for epitaxial growth. For example, the CDW properties of TiSe 2 could be tuned by CuSe substrates .…”

Section: Introductionmentioning

confidence: 99%

New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)

et al. 2022

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Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p x and p y ). These two bands located at about −2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces.

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