Cutting edge multiple beam technology for EUV era: latest development progress and application

Long, Eric; Chou, Kevin; Liu, Xuedong; Ren, Weiming; Hu, Xuerang; Wang, Fei; Liu, Kevin

doi:10.1117/12.2323183

Cited by 2 publications

(2 citation statements)

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“…To address the issue that systematic defects may not be inspected in the die-to-die comparison, one can consider fabricating a 'golden' die known to be defect-free [67], although it may be difficult because of the variations in the fabrication line. Another strategy, which is known as 'die-to-database' [68,69], compares the experimental image of a die to the simulated one of a modeled defect-free die. The simulated image can be computed efficiently through Fourier optics theory [70,71], which converts the nearfield of a die to the image space.…”

Section: Amplitude-based Optical Inspection Systemsmentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond. Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas: (1) the defect detectability evaluation, (2) the diverse optical inspection systems, and (3) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.

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Section: Amplitude-based Optical Inspection Systemsmentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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show abstract

“…During the fabrication of wafers, the cleanliness of the wafer surface directly affects the chip yield [1] . Nanoscale defects can lead to irreversible chip damage.…”

Section: Introductionmentioning

confidence: 99%

Elliptical polarization characterization of scattered light in dark field defect inspection technology

Wu,

Xu,

Liu

2023

3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023)

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In the field of unpatterned wafer inspection, the biggest market share is dark field defect inspection, in which the signalto-noise ratio limits the detection limit. In order to improve the signal-to-noise ratio of the optical detection method based on the theory of dark-field scattered light. In this paper, the influence of the polarization characteristic of light on the scattering field is studied, and the signal-to-noise ratio of the scattering signal can be improved by controlling the polarization component of light. The results show that modulating the polarized light can achieve a higher signal-to-noise ratio.

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Cutting edge multiple beam technology for EUV era: latest development progress and application

Cited by 2 publications

References 0 publications

Optical wafer defect inspection at the 10 nm technology node and beyond

Optical wafer defect inspection at the 10 nm technology node and beyond

Elliptical polarization characterization of scattered light in dark field defect inspection technology

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