CVD and ALD of Cobalt-tungsten alloy film as a novel Copper diffusion barrier

Shimizu, H.; Sakoda, Kaoru; Shimogaki, Yukihiro

doi:10.1109/iitc.2011.5940343

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…11,12 Therefore, for the sidewall, other materials, in which adhesion strength is not affected by impurities, must be developed. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] From the viewpoint of surface engineering, Young-Dupre's equation expresses the relationship between adhesion strength and interfacial energy. Lower interfacial energy between two materials produces high adhesion strength.…”

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confidence: 99%

“…We previously evaluated alloy films of Co with W addition [Co(W)] formed by CVD or ALD as an alternative material to the PVD-Ta/TaN double layer, [30][31][32] because Co(W) is thought to have low resistivity and good adhesion with Cu regardless of possible impurities in the interface between Co(W) and Cu derived from ligands or byproducts of precursors. [33][34][35][36][37] In this current study, we successfully designed oxygen-free Co(W) films by thermal CVD or ALD using NH 3 and two oxygen-free precursors, namely, bis (N-tert-butyl-N -ethyl-propaneamidinato) cobalt (II) [Co(AMD) 2 ] and bis (tert-butylimino) bis (dimethylamino) tungsten (IV) (BTBMW), whose molecular structures are shown in Fig.…”

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confidence: 99%

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CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Shimizu

Suzuki

Nogami

et al. 2013

ECS J. Solid State Sci. Technol.

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Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in Cu-interconnects owing to its good adhesion with Cu, a lower resistivity than TaN, and an improved barrier property with respect to cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included in the films increased the resistivity. In this current study, to reduce the resistivity of Co(W), oxygen-free process for Co(W) films were designed using two oxygen-free amidinato precursors, bis(N-tert-butyl-N′-ethylpropionamidinato) cobalt and bis(tert-butylimino)bis(dimethylamino)tungsten, by chemical vapor deposition (CVD) and atomic layer deposition (ALD) at 350–400°C. Deposition process were designed by employing quantum chemical calculation, in which NH3 were chosen as a reducing reagent for the sake of the low activation energy of deposition. NH3 actually acted effective reducing reagent for Co or Co(W) deposition using amidinato precursors in our research. Co(W) films using amidinato precursors and NH3 contained no oxygen and a few amounts of nitrogen. Nitrogen, however, were easily eliminated by annealing at 400°C. Therefore, Co(W) films using amidinato precursors were so high quality to have lower resistivity than Co(W) films using carbonyl precursors or conventional PVD-TaN.

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confidence: 99%

mentioning

confidence: 99%

CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Shimizu

Suzuki

Nogami

et al. 2013

ECS J. Solid State Sci. Technol.

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show abstract

“…8) Therefore, for the sidewall, other materials, in which adhesion strength is not affected by impurities, must be developed. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] From the viewpoint of surface engineering, Young-Dupre's equation expresses the relationship between adhesion strength and interfacial energy. Lower interfacial energy between two materials produces high adhesion strength.…”

Section: Introductionmentioning

confidence: 99%

“…We previously evaluated alloy films of Co with added W [Co(W)] formed by CVD or ALD as an alternative material to the PVD-Ta/TaN double layer, 28,29) because Co(W) is thought to have low resistivity and good adhesion with Cu regardless of possible impurities in the interface between Co(W) and Cu derived from ligands or byproducts of precursors. [30][31][32] Electroless-plated CoWP reportedly has a resistivity of 20-80 cm, which is sufficiently low that this CoWP can be used as a ''metal-cap'' layer for Cu lines.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Shimizu

Sakoda

Momose

et al. 2012

Jpn. J. Appl. Phys.

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Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects awing to its good adhesion with Cu, a lower resistivity than TaN, and an improved barrier property with respect to cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included in the films increased the resistivity. In this current study, to reduce the resistivity of Co(W), oxygen-free Co(W) films were fabricated from two oxygen-free precursors, bis(cyclopentadienyl)cobalt and bis(cyclopentadienyl)tungstendihydride, by atomic layer deposition (ALD) using NH2 radicals generated using a hot filament. Results revealed that (a) W concentration in ALD-Co(W) could be controlled by adjusting the gas-feed sequences, (b) W addition improved the barrier property of ALD-Co(W) against Cu diffusion, (c) diffusion of Cu into ALD-Co(W) had a high activation energy, 2.0 eV, indicating interstitial diffusion, and (d) ALD-Co(W) consisted mainly of an amorphous-like phase, which is consistent with the high activation energy of Cu diffusion.

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Structural and electrical characterization of CoNiO monolayer as copper diffusion barrier in integrated circuits

Sharma

Kumar

Rani

et al. 2016

Materials Science in Semiconductor Processing

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CVD and ALD of Cobalt-tungsten alloy film as a novel Copper diffusion barrier

Cited by 3 publications

References 6 publications

CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Structural and electrical characterization of CoNiO monolayer as copper diffusion barrier in integrated circuits

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