CVD diamond growth mechanisms as identified by surface topography

Enckevort, W.J.P. van; Janßen, G.; Vollenberg, W.; Schermer, J.J.; Giling, L.J.; Seal, M.

doi:10.1016/0925-9635(93)90264-3

Cited by 88 publications

(37 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Rather than a stepped and curved surface due to stabilization in one direc-tion by (110) PBCs as expected from a first-order PBC analysis (see Fig. la), this orientation is stabilized by microfaceting [5,11]. In this respect {110} and more generally the {hhk}h> ~ orienta- tions behave just as all other orientations with Miller indices other than {hhk} h < k, as was shown on the {111} samples.…”

Section: Growth On {110} Substratesmentioning

confidence: 59%

See 1 more Smart Citation

Orientation dependent surface stabilization on flame deposited diamond single crystals

Schermer

Enckevort

Giling

1995

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

In this study a model for the orientation dependent surface stabilization of diamond grown from the vapour phase is presented. The model is based on a first order broken bond analysis of the diamond crystal with additional considerations about surface reconstruction by dimer formation. Due to the formation of dimers, surface stabilization is expected for orientations corresponding to Miller indices {hhk} h < k in the (110) zones. It is demonstrated that this model gives a good description of growth phenomena like facets, curved bands and microfaceting, observed on homoepitaxially grown diamond samples. These specimens are obtained by flame deposition on cylindrical type IIa natural diamond substrates with {111}, {110} or {001} top faces. In conformation with the model the surfaces {hhk}h < k between {111} and {113} appear to be stabilized in one direction, while a discrete number of orientations between {113} and {001} are subject to two-dimensional stabilization. All other surfaces are stabilized by the development of microfacets which also have orientations close to {hhk} h <_ k, as was determined by laser reflectometry. In addition it is shown that differences in the orientation dependent incorporation of nitrogen as nitrogen-vacancy pairs in the diamond lattice is consistent with the described model. For this purpose a single crystalline diamond layer grown on top of a hemispherical diamond substrate by the flame technique was investigated by cathodoluminescence topography.

show abstract

Section: Growth On {110} Substratesmentioning

confidence: 59%

“…The orientation dependent incorporation of impurities was investigated by flame deposition of a thin epitaxial layer on a hemispherical diamond substrate with a {110} top orientation [11]. The CL image of the grown layer shown in Fig.…”

Section: Nitrogen -Vacancy Pairsmentioning

confidence: 99%

Orientation dependent surface stabilization on flame deposited diamond single crystals

Schermer

Enckevort

Giling

1995

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

show abstract

“…Blue band A luminescence from this {hhk}h<~k 6.5 mmx 9 mm was used. The position of the sample, part of the (110) zone has also been reported for an initially 1.0 mm below the flame cone, was readjusted epitaxial, flame-deposited diamond layer on a hemiseveral times during the experiment, to correct for its spherical diamond substrate [12]. It is suggested that increasing thickness during growth.…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…Growth of these faces, and {1 1 9}, as indicated by the dark spots in the figure. which normally proceeds by the random addition of For silicon, the stability of facets in the (110) zone and growth units at the surface [ 11], appears to be destabithe occurrence of {7 7 13} facets have been reported by lized by the development of microfacets [12]. The Gardeniers et al [13,14].…”

Section: Microscopymentioning

confidence: 99%

Flame deposition and characterization of large type IIA diamond single crystals

Schermer¹,

Enckevort²,

Giling³

1994

Diamond and Related Materials

Self Cite

View full text Add to dashboard Cite

High quality diamond layers 70-400 gm thick have been deposited homoepitaxially on { 100} and { 110} natural diamond substrates 3-4 mm in diameter by acetylene-oxygen flame deposition. For this purpose, a special substrate-cooling system was used in combination with a burner which had an orifice of 1.6 mm. Microscopic observations revealed that the surface morphology (and thus the mechanism of diamond formation) is strongly dependent on the substrate orientation. Raman spectroscopy showed a significantly lower background fluorescence and a smaller full width at half-maximum (FWHM) of the diamond peak at 1332 cm -1 for layers grown on { 100} substrates than for those grown on { 110} substrates. Most crystals grown on { 100} substrates could be identified as type IIa diamond by IR absorption spectroscopy. However, small traces of nitrogen, not detectable by IR spectroscopy, could be detected by cathodoluminescence as nitrogen-vacancy pairs at 2 = 575 nm. The purest layers mainly exhibit blue band A luminescence. Finally, a large 0.4 carat single-crystal diamond was grown on top of a {110} diamond substrate 6.5 mm x 9 ram. The layer is of type IIa but exhibits cracks parallel to the <1i2> directions. Most other layers grown on { 110} substrates exhibit the same features, but none of the { 100} samples showed any sign of crack formation.

show abstract

“…1 [2,[20][21][22]. Such step bunches originate from a pile-up of atomically high steps generated at a given step source [23].…”

Section: Macrostep Patterns On {001} Diamond Facesmentioning

confidence: 99%

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Schermer

Theije

Giling

1996

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

This study describes homoepitaxial growth and etch phenomena observed on cubic diamond faces as obtained by the application of an acetylene-oxygen combustion flame. It is demonstrated that flame etching of the diamond substrates prior to growth decreases the number of crystallographic imperfections in the diamond layers especially at the edges. This enables a more uniform distributed step generation by the large number of individual dislocations present in the used natural type IIa diamond substrates. Due to this improvement it appears possible to grow one single crystal diamond layer on top of several closely spaced, well-aligned natural diamond substrates. In the present work the overgrowth of a three-piece mosaic structure with gaps along (100) as well as along (110) is reported for the first time. The single crystal nature of this flame-deposited diamond layer could be confirmed by the observation of continuous growth step patterns at the surface across the joint regions. The widths of the gaps between the substrates in the original mosaic structure varied from 7 to 25 ~m, which is more than an order of magnitude larger than the gaps along (100) in two-piece mosaic structures, of which the single crystal overgrowth by HFCVD was previously reported. Comparison of micro-Raman spectra obtained from the joint regions with those from other parts of the overgrown mosaics discussed in the present work, show a larger FWHM of the diamond peak in case of a (110) joint and a shift of the peak position to higher wave numbers in case of a (100) joint.

show abstract

CVD diamond growth mechanisms as identified by surface topography

Cited by 88 publications

References 33 publications

Orientation dependent surface stabilization on flame deposited diamond single crystals

Orientation dependent surface stabilization on flame deposited diamond single crystals

Flame deposition and characterization of large type IIA diamond single crystals

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Contact Info

Product

Resources

About