CVD diamond-SiC composite films: Structure and electrical properties

Microporous poly- and monocrystalline diamond films produced from chemical vapor deposited diamond–germanium composites

“…For comparison reasons, 500 nm-thick diamond-SiC composite lms were synthesized using similar growth conditions as for the diamond-Ge composite, but instead of germane, a monosilane (SiH 4 ) gas was added into the gas mixture with concentration [SiH 4 ]/[CH 4 ] = 20%. 61,67 Other CVD process parameters for growth of the diamond-SiC composite were: concentration of methane 4%, total gas ow 500 sccm, microwave power 5 kW, pressure 72 Torr, substrate temperature 800 °C, deposition time 2 hours, and growth rate z 250 nm h −1 . More details on such growth and the exact recipe are reported in ref.…”

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

“…57 4. Hexagonal 4H-SiC: Few reports have been published recently on CVD of hexagonal (4H-SiC) polytype thin films, 36,37,40,51,57,58 a fact which could be attributed to their already well-established properties and widespread use in a variety of proven technological applications, as discussed above. The primary focus of ongoing research efforts into CVD 4H-SiC thin films is on enhancing epitaxy and reducing defects in well-established 4°off-axis 4H-SiC substrates.…”

“…• L. Zhao et al 36 gaseous species which then diffused to the substrate surface through the stagnant boundary layer above the wafer to react and form the 4H-SiC phase. However, a growth rate of ∼50 μm h −1 was reported at ∼15 torr, decreasing to less than ∼5 μm h −1 at ∼120 torr.…”

“…Single Source Precursors: In terms of source precursors, thermal and PE-CVD predominantly use either inorganic perhydridosilanes or halosilanes as Si sources and hydrocarbons as C sources for the formation of SiCx. Silane (SiH4), 9,18,31,36,38,40,42,44,45,51 trichlorosilane (SiHCl3 or TCS), 38,57,58,60,61 and tetrachlorosilane (SiCl4) 37,47,[53][54][55][56][57] continue to be the most preferred Si precursors, while methane, acetylene, ethylene, and propane are the hydrocarbons most employed as C sources. 9,18,31,[36][37][38]40,42,44,45,47,51,[53][54][55][57][58][59] However, the universally established use of perhydridosilanes or halosilanes presents significant challenges that limit applicability in many emerging SiC applications which employ thermally, chemically, and/or electrically fragile substrates.…”

“…Silane (SiH4), 9,18,31,36,38,40,42,44,45,51 trichlorosilane (SiHCl3 or TCS), 38,57,58,60,61 and tetrachlorosilane (SiCl4) 37,47,[53][54][55][56][57] continue to be the most preferred Si precursors, while methane, acetylene, ethylene, and propane are the hydrocarbons most employed as C sources. 9,18,31,[36][37][38]40,42,44,45,47,51,[53][54][55][57][58][59] However, the universally established use of perhydridosilanes or halosilanes presents significant challenges that limit applicability in many emerging SiC applications which employ thermally, chemically, and/or electrically fragile substrates. As mentioned above, CVD SiC from perhydridosilanes or halosilanes necessitates significantly higher decomposition temperatures to yield SiC films with the target properties.…”