CVD-grown Fe²⁺:ZnSe polycrystals for laser applications

Abstract

A technique for growing bulk zinc selenide polycrystals, doped with iron ions, by chemical vapor deposition (CVD), has been developed. It has been shown that iron is embedded in the crystal lattice of deposited zinc selenide in the optically active state of Fe 2+ . To improve the optical quality, the grown material was subjected to postgrowth hot isostatic pressing (HIP) treatment. It was experimentally demonstrated that the synthesised bulk crystals can be used as the active media of Fe 2+ :ZnSe lasers and as the passive Q-switches for three-micron lasers. The letter goes on to discuss the prospect of extending the proposed method to the synthesis of zinc sulphide doped with iron ions.

Laser properties of active media based on ZnSe doped with Fe and In from spray pyrolysis deposited films

“…The 130 mm long The values of differential efficiency of Fe:ZnSe active elements with one-sided doping obtained in this work were lower than the maximum values of this parameter (η = 53%) for polycrystalline active elements with bilateral doping [27]. At the same time, the efficiency of these samples is on a par with the efficiency of Fe:ZnSe single crystals [28] and polycrystalline active elements with inner doped layer(s) produced by the CVD technique [29,30] and SSDB. The lasing efficiency of sample #4 produced by diffusion annealing in a zinc atmosphere was significantly lower (ηµ = 25%), that, in our opinion, is associated with the short length of the active region under the given doping conditions, which is confirmed by the distribution profile of the Fe 2+ ion concentration.…”

A Review of Cr2+ or Fe2+ Ion-Doped Zinc Sulfide and Zinc Selenide Ceramics as IR Laser Active Media

“…The ability to control the active ion distribution profile in the AE volume has been demonstrated through the use of additive technologies, in particular layer-by-layer doping during CVD [36,42,52] or solid-state diffusion bonding of doped elements [37,38,46,53]. Despite the improvement of some properties of such AEs (e.g., suppression of parasitic oscillations has been demonstrated [37,46]), these methods did not lead to a qualitative change due to the difficult technical feasibility, the formation of defects in the bonding zone, and probably an increased contamination due to the multi-step fabrication process.…”

Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film

“…Studies on ZnSe thin film has been inspired to the many electronic applications where the growth of this film layer on various substrates can be achieved by a variety of thin film deposition techniques. Although chemical processes have been used to obtain this layer [27,28], physical vapor deposition techniques have been thoroughly studied depending on their advantages to form durable surface coatings without toxic residuals using environmentally friendly processes [12,15,17]. Among these physical methods, electronbeam supported deposition has been employed to grow ZnSe thin film layer on glass substrate considering its prominent characteristics as being cost effective, easily controllable, reproducible in depositing relatively pure films [11,12].…”