CVD-Grown Thin Films of Molecule-Based Magnets

de, Dominique; Basso-Bert, Mario; Sakah, Jamal; Casellas, Hélène; Legros, Jean-Pierre; Valade, Lydie; Cassoux, P.

doi:10.1021/cm9904279

Cited by 53 publications

(40 citation statements)

References 15 publications

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“…In this family of hybrid magnets, V͓TCNE͔ x ͑x ϳ 2͒ ͑Refs. 3,6, and 7͒ represents a major breakthrough as it displays magnetic ordering above room temperature ͑T C ϳ 400 K͒. 8,9 A stoichiometry close to V͑TCNE͒ 2 has been suggested from elemental analysis 3 and this composition has been recently confirmed by x-ray photoelectron spectroscopy ͑XPS͒ measurements, from which a nitrogen to vanadium ratio of R NV = 7.5 ͑Ref.…”

Section: Introductionmentioning

confidence: 95%

“…However, the commercial use of V͑TCNE͒ 2 is currently limited as the material is amorphous and extremely air and water sensitive. 3,6,7,10,11 The lack of long-range order and the substantial influence of the synthetic procedure ͑i.e., starting materials, 3,25 solvent, 9 and preparation method 6,7,26,27 ͒ on the system properties clearly suggest that V͑TCNE͒ 2 compounds contain structural defects and impurities such as residual solvent and/or by-products. Furthermore, it is possible that multiple metastable structures are thermodynamically feasible under typical preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

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Density functional study of the magnetic coupling inV(TCNE)2

et al. 2009

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A simple model structure of the room-temperature magnetic semiconductor V͑TCNE͒ 2 is proposed on the basis of available experimental data. The structural, electronic, and magnetic properties are investigated using hybrid-exchange density functional theory within periodic boundary conditions. A spin-polarized ferrimagnetic ground state with a total spin of 1 B per formula unit is identified. The analysis of the corresponding electronic band structure and spin distribution reveals strong interactions between the V ions and the ͓TCNE͔ ·− radicals, identified as spin carrying units. Within a simple Ising Hamiltonian, a strong antiferromagnetic coupling between the metal and its nearest-neighbor ligands is predicted which is consistent with the observed hightemperature magnetic ordering. The computed results provide useful insight into the physical origin of the exceptional magnetic behavior of V͑TCNE͒ 2 .

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Density functional study of the magnetic coupling inV(TCNE)2

et al. 2009

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“…Development of chemical vapor deposition (CVD) fabrication techniques has however improved stability and reproducibility of the material [13][14][15][16][17]. An extended x-ray absorption fine structure (EXAFS) study has probed the local structure of the compound, showing that the vanadium ion coordinates to about six nitrogen atoms, most likely in a slightly distorted octahedral environment, each with an average distance in room temperature of 2.084(5) Å [18].…”

Section: Introductionmentioning

confidence: 99%

The unoccupied electronic structure of the semi-conducting room temperature molecular magnet V(TCNE)2

Carlegrim¹,

Kanciurzewska²,

Jong³

et al. 2008

Chemical Physics Letters

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The unoccupied electronic structure of the semi-conducting room temperature molecular magnet V(TCNE) 2 , 2008, Chemical Physics Letters, (452) AbstractThe unoccupied electronic structure of the organic-based magnet V(TCNE) x (TCNE = tetracyanoethylene, x~2) has been studied with near edge x-ray absorption fine structure (NEXAFS) and with photoelectron spectroscopy (PES). By studying V(TCNE) x upon sodiumdoping, the electron-accepting state, i.e. the lowest unoccupied molecular orbital (LUMO) of V(TCNE) x was shown mainly to be localized on (TCNE) --units in contrast to the holeaccepting state, i.e. the highest occupied molecular orbital (HOMO), which previously was assigned primarily to be V(3d)-derived. This study also showed that there are trap states for electron transport located below the (TCNE) 2-level, likely leading to decreased electron mobility.

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“…[2][3][4][5][6] The high Curie temperature in combination with semiconducting behavior and complete spin polarization 7 makes V͑TCNE͒ x a promising material for spintronic applications. 8 A main problem of V͑TCNE͒ x , however, is its extreme air sensitivity 2,[9][10][11]13 and that residual solvent molecules and/or precursor-based by-products negatively affect magnetic properties 11,14 as well as introduce electron trap states. 15 Here, we present a in situ preparation method based on physical vapor deposition ͑PVD͒ resulting in films free from residual solvent molecules and precursor-based byproducts.…”

mentioning

confidence: 99%

“…2 The problem of residual solvent was eliminated by the preparation of V͑TCNE͒ x by chemical vapor deposition ͑CVD͒. 9,10 In the CVD process, the precursors, TCNE, and bis͑benzene͒vanadium, V͑C 6 H 6 ͒ 2 ͓or vanadium hexacarbonyl, V͑CO͒ 6 ͔ react, forming a solvent-free thin magnetic V͑TCNE͒ x film onto a substrate. The lack of solvent molecules cause increased structural order, and hence, improved magnetic characteristics.…”

mentioning

confidence: 99%

Air-stable organic-based semiconducting room temperature thin film magnet for spintronics applications

Carlegrim

Kanciurzewska

Nordblad

et al. 2008

Applied Physics Letters

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Herein, we report on a preparation method of vanadium tetracyanoethylene, V(TCNE)x, an organic-based semiconducting room temperature thin film magnet. Previously, this compound has been reported to be extremely air sensitive but this preparation method leads to V(TCNE)x, which can retain its magnetic ordering at least several weeks in air. The electronic structure has been studied by photoelectron spectroscopy and the magnetic properties by superconducting quantum interference device. The properties mentioned above, in combination with complete spin polarization, makes this air-stable V(TCNE)x a very promising material for spintronic devices.Original publication: Elin Carlegrim, Anna Kanciurzewska, Per Nordblad and Mats Fahlman, Air-stable organic-based semiconducting room temperature thin film magnet for spintronics applications, 2008, Applied Physics Letters, (92), 163308. http://dx.doi.org/10.1063/1.2916901. Copyright: American Institute of Physics, http://apl.aip.org/apl/top.js

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CVD-Grown Thin Films of Molecule-Based Magnets

Cited by 53 publications

References 15 publications

Density functional study of the magnetic coupling inV(TCNE)2

Density functional study of the magnetic coupling inV(TCNE)2

The unoccupied electronic structure of the semi-conducting room temperature molecular magnet V(TCNE)2

Air-stable organic-based semiconducting room temperature thin film magnet for spintronics applications

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