CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits

Diallo, Thierno Mamoudou; Aziziyan, Mohammad Reza; Arvinte, Roxana; Arès, Richard; Fafard, S.; Boucherif, Abderraouf

doi:10.1016/j.carbon.2020.12.024

Cited by 8 publications

(8 citation statements)

References 50 publications

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“…In fact, it was demonstrated that HBr could effectively remove suboxides on Ge surfaces. [ 21 ] This deoxidized substrate was introduced into the DIW and was used to carefully scoop out the PMMA/SLG from below. The Ge substrate with PMMA/SLG was then dried for 30 min in ambient clean room air, followed by annealing on the hot plate at 150 °C for 1 h. The sample was then stored for 24 h under the vacuum to avoid any detachment of the SLG and to remove all the residual moisture.…”

Section: Methodsmentioning

confidence: 99%

Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation

Diallo,

Hanuš,

Patriarche

et al. 2023

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The heterointegration of graphene with semiconductor materials and the development of graphene‐based hybrid functional devices are heavily bound to the control of surface energy. Although remote epitaxy offers one of the most appealing techniques for implementing 3D/2D heterostructures, it is only suitable for polar materials and is hugely dependent on the graphene interface quality. Here, the growth of defect‐free single‐crystalline germanium (Ge) layers on a graphene‐coated Ge substrate is demonstrated by introducing a new approach named anchor point nucleation (APN). This powerful approach based on graphene surface engineering enables the growth of semiconductors on any type of substrate covered by graphene. Through plasma treatment, defects such as dangling bonds and nanoholes, which act as preferential nucleation sites, are introduced in the graphene layer. These experimental data unravel the nature of those defects, their role in nucleation, and the mechanisms governing this technique. Additionally, high‐resolution transmission microscopy combined with geometrical phase analysis established that the as‐grown layers are perfectly single‐crystalline, stress‐free, and oriented by the substrate underneath the engineered graphene layer. These findings provide new insights into graphene engineering by plasma and open up a universal pathway for the heterointegration of high‐quality 3D semiconductors on graphene for disruptive hybrid devices.

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Section: Methodsmentioning

confidence: 99%

Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation

Diallo,

Hanuš,

Patriarche

et al. 2023

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“…222,223 Such a feature could result in an aperiodic arrangement of film lattice during the atomic deposition, thereby generating some intrinsic defects like vacancies or pits. 224…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Defect engineering of two-dimensional materials for advanced energy conversion and storage

2023

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“…CVD technology has been widely used in the preparation of various 2D materials, as shown in table 3. For example, Diallo et al synthesized graphene on Ge(100) substrate, revealing the reasons for the formation of pit defects on the substrate, which laid a foundation for the preparation of high-quality graphene [61]. Du et al fabricated a graphene-MoTe 2 vertical heterostructure photodetector [63].…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

Recent progress in waveguide-integrated photodetectors based on 2D materials for infrared detection

Huang

Hao

et al. 2023

J. Phys. D: Appl. Phys.

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Two-dimensional(2D) materials have received extensive attention in optoelectronics because of their unique characteristics. However, due to the extremely thin thickness of 2D materials, their optical absorption is limited. In recent years, researchers have used different effects and structures to enhance the optical absorption of 2D materials. Waveguide, as a device to guide and limit light propagation, has been integrated into photodetectors based on 2D materials, and most of them are applied in the infrared spectrum. This article reviews the development of waveguide-integrated photodetectors based on 2D materials, mainly in the infrared spectrum in recent years. Discussions mainly focus on the preparation of materials in waveguide-integrated photodetectors, the design and simulation of waveguide structures, and the research results and applications of waveguide-integrated photodetectors in recent years are summarized. Finally, the challenges and prospects of waveguide-integrated photodetectors are put forward and discussed.

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CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits

Cited by 8 publications

References 50 publications

Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation

Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation

Defect engineering of two-dimensional materials for advanced energy conversion and storage

Recent progress in waveguide-integrated photodetectors based on 2D materials for infrared detection

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