CVD growth of large-area InS atomic layers and device applications

Abstract

Indium sulfide (InS) atomic layers made by chemical vapor deposition (CVD) are synthesized onto a mica substrate, producing a highly crystalline, large-area, and atomically thin-film InS flakes.

Aligned InS Nanorods for Efficient Electrocatalytic Carbon Dioxide Reduction

“…44 As shown in Figure 3b, three typical Raman shift peaks located at 150.9 cm −1 (In−In stretching mode), 220.3 cm −1 (S−In bending mode), and 318.2 cm −1 (S−In stretching mode) were observed on the aligned InS NRs under open-circuit potential (OCP). 45,46 The three typical Raman shift peaks do not appear to weaken or disappear as the applied voltage increased from the open-circuit potential to −0.8 V vs RHE. Notably, the chemical composition and chemical state of the aligned InS NRs are maintained after long-term stability testing, which indicates that the aligned InS NRs are stable in the harsh catalytic process.…”

“…To investigate the surface chemical state of the aligned InS NRs catalyst during CO 2 RR, in situ Raman spectroscopy was used to analyze the dynamic change of aligned InS NRs surface (Figure a), which is an efficient CO 2 RR process-monitoring technology with high intermediate recognition sensitivity . As shown in Figure b, three typical Raman shift peaks located at 150.9 cm –1 (In–In stretching mode), 220.3 cm –1 (S–In bending mode), and 318.2 cm –1 (S–In stretching mode) were observed on the aligned InS NRs under open-circuit potential (OCP). , The three typical Raman shift peaks do not appear to weaken or disappear as the applied voltage increased from the open-circuit potential to –0.8 V vs RHE. Notably, the chemical composition and chemical state of the aligned InS NRs are maintained after long-term stability testing, which indicates that the aligned InS NRs are stable in the harsh catalytic process.…”

Indium Chalcogenide Nanomaterials in the Forefront of Recent Technological Advancements

“…heterostructures for potential use optoelectronics [21]. Bilayer and trilayer InS triangular nanoflakes have also been prepared by chemical vapor deposition [22], potential applications envisaged as heterojunctions in nanoelectronic devices.…”

Promising ultra-short channel transistors based on OM2S (M = Ga, In) monolayers for high performance and low power consumption

“…15 InS-based devices demonstrate native n-type performance, accompanied by a high on/off current ratio (10 3 ). 16 Zhang et al used the chemical vapour deposition (CVD) method to fabricate a Janus MoSSe monolayer, and its atomic layers are arranged as S–Mo–Se, which induces an intrinsic piezoelectric response and a high catalytic activity for the hydrogen evolution reaction. 17 Motivated by this study, 2D Janus materials and their performance have also been studied extensively.…”