CVD Growth of MoS<sub>2</sub>‐based Two‐dimensional Materials

Liu, H. F.; Wong, Swee Liang; Z., D.

doi:10.1002/cvde.201500060

Cited by 190 publications

(123 citation statements)

References 78 publications

(189 reference statements)

Supporting

Mentioning

119

Contrasting

Unclassified

Order By: Relevance

“…It could be clearly seen from Figure c that the crystals formed in the region B are very different in shape. Raman data (Figure d) of region 2 suggests that a mix phase of MoO 2 and MoS 2 is formed . Such inhomogeneous growth might have occurred because at the uncovered area a large amount of MoO 3 deposited very quickly as shown in Figure a, whereas in the covered area the deposition rate is much slower.…”

Section: Resultsmentioning

confidence: 94%

Growth of Highly Crystalline and Large Scale Monolayer MoS₂ by CVD: The Role of substrate Position

Kumar¹,

Tomar²,

Wadehra³

et al. 2018

Crystal Research and Technology

View full text Add to dashboard Cite

Monolayer (ML) molybdenum disulphide (MoS2) is of great interest for the scientific community due to its attractive electronic, optoelectronic and mechanical properties. Synthesis of high quality and large size ML MoS2 at low cost is still a challenge. Here, the growth of large area (≈5 × 1 mm2) ML MoS2 on SiO2/Si substrate via chemical vapor deposition (CVD) method is reported. It is shown by changing the substrate position w.r.t. MoO3 precursor, that the quality and size of the ML MoS2 can be drastically tuned. Raman spectroscopy and transmission electron microscopy are performed in order to ascertain the growth and high crystallinity of MoS2. Uniformity of MoS2 layer is adjudged by Raman mapping while atomic force microscopy is performed to determine the thickness of the layer. Kelvin probe force microscopy is performed on ML MoS2 to draw the band line up of the material.

show abstract

Section: Resultsmentioning

confidence: 94%

Growth of Highly Crystalline and Large Scale Monolayer MoS₂ by CVD: The Role of substrate Position

Kumar¹,

Tomar²,

Wadehra³

et al. 2018

Crystal Research and Technology

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

“…[33][34][35][36] Unfortunately, the low vapor pressure of MoO 3 sets limitations to both the deposition temperature (typically 650-850 °C) and deposition area (typically no more than 1 cm 2 ). [34,36] Sulfurization of Mo or MoO x films also requires high temperatures, usually 500-1000 °C. [36][37][38][39] Although upscaling of the sulfurization method appears to be easier compared to the MoO 3 -based CVD, sulfurization tends to produce films of lower quality.…”

Section: Introductionmentioning

confidence: 99%

“…[36][37][38][39] Although upscaling of the sulfurization method appears to be easier compared to the MoO 3 -based CVD, sulfurization tends to produce films of lower quality. [34,36,37] Other bottom-up techniques used for the deposition of thin MoS 2 films include sputtering, [40] physical vapor transport, [41] pulsed laser deposition, [42] and atomic layer deposition (ALD). [43][44][45][46][47][48][49][50][51][52] Atomic layer deposition is an inherently scalable technique that can be regarded as an advanced modification of CVD.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

111

View full text Add to dashboard Cite

Compared to the most well-known 2D material, graphene, which is a semi-metal, the semiconducting 2H phase of MoS 2 is advantageous in having a band gap suitable for electronic applications. In bulk form, MoS 2 has an indirect band gap of 1.3 eV, which increases as a function of decreasing film thickness. In monolayer MoS 2 (thickness ≈0.6 nm), the band gap becomes direct with a width of 1.8 eV. [1] Importantly, to meet the requirements of different applications, properties of MoS 2 and other TMDCs can be tuned by controlling the thickness, [1] doping and alloying, [5][6][7][8] surface modification and functionalization, [9][10][11] strain, [12,13] and by creating heterostructures with other 2D materials. [6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications. MoS 2 has been extensively studied as a channel material in conventional field-effect transistors, [17][18][19][20][21] as well as phototransistors and other optoelectronic devices. [16,21,22] The 2D structure of TMDCs plays a crucial role in possible applications relying on more exotic quantum phenomena, such as valleytronics. [23,24] MoS 2 has also shown promise in, for example, catalysis, [25] batteries, [26] photovoltaics, [27] sensors, [28] and medicine. [29] The production of high-quality, large-area MoS 2 films with a thickness controllable down to a monolayer, as required in many of the aforementioned applications, still remains a major challenge. Additionally, in many cases, the processing temperature should be kept as low as possible in order to avoid damaging sensitive substrates, such as polymers or nanostructures. Initially, flakes of monolayer MoS 2 were produced from natural MoS 2 crystals using micromechanical exfoliation, a topdown method capable of producing high-quality monolayers, albeit with poor throughput as well as limited control over flake thickness and dimensions. [4,30,31] Liquid-phase exfoliation of bulk crystals, on the other hand, offers good scalability, but often suffers from limited flake size, poor crystallinity, or contamination. [4,31,32] Bottom-up methods offer a more controllable way to produce MoS 2 films. High-quality MoS 2 thin films are most commonly deposited by chemical vapor deposition (CVD) or sulfurization of metal or metal oxide thin films. The most common Molybdenum disulfide (MoS 2 ) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS 2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS 2 thin films at a relatively low temperature of 300 °C. A new molybdenum precursor, Mo(thd) 3 (thd = 2,2,6,6-tetramethylheptane-3,5-dionato), is synthesized, characterized, and used for film deposition with H 2 S as the sulfur precursor. Self-limiting growth with a low growth rate of ≈0.025 Å cycle −1 , straightforward thickness control, and large-area uni...

show abstract

“…1,2 It has been reported that large-area and uniform single layer MoS 2 can be synthesized by performing chemical vapor deposition (CVD) on various substrates with atomically smooth surfaces such as SiO 2 on Si, sapphire, and mica. 3 However, the full exploitation of the potential of CVD MoS 2 requires a method for the clean transfer of the as-grown MoS 2 from the growth substrate to the target substrate without degeneration of its properties. The current approach to the transfer of CVD MoS 2 usually involves coating a polymer carrier film on top of the CVD MoS 2 as a supporting layer and the chemical etching of the growth substrate to separate MoS 2 from its surface.…”

Section: Introductionmentioning

confidence: 99%

Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates

et al. 2016

View full text Add to dashboard Cite

The transfer of two-dimensional (2D) material layers to arbitrary substrates from growth substrates is critical for many applications. Although several studies of transfer processes have been reported, a transfer method that does not degrade 2D layers and damage growth substrates is still required. In this paper, we report a method that with the assistance of water penetration enables the mechanical transfer of MoS2, one of the most widely studied 2D materials, from the growth substrate to a target substrate without any etching of the growth substrate or leaving any polymer residue on the MoS2 layer. The difference between the adhesion forces of the MoS2 and carrier films and the difference between the hydrophobicities of MoS2 and the growth substrate mean that water can easily penetrate the interspace at the MoS2/growth substrate interface generated by the peeling off process. We also experimentally confirmed the usefulness of Cu carrier films as a contact material for MoS2 that enables its clean separation. Our transfer method protects the original quality and morphology of large area MoS2 without leaving any polymer residue, and enables the reuse of the growth substrate. This clean transfer approach is expected to facilitate the realization of industrial applications of MoS2 and other 2D materials.

show abstract

CVD Growth of MoS₂‐based Two‐dimensional Materials

Cited by 190 publications

References 78 publications

Growth of Highly Crystalline and Large Scale Monolayer MoS₂ by CVD: The Role of substrate Position

Growth of Highly Crystalline and Large Scale Monolayer MoS₂ by CVD: The Role of substrate Position

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates

Contact Info

Product

Resources

About

CVD Growth of MoS2‐based Two‐dimensional Materials

Cited by 190 publications

References 78 publications

Growth of Highly Crystalline and Large Scale Monolayer MoS2 by CVD: The Role of substrate Position

Growth of Highly Crystalline and Large Scale Monolayer MoS2 by CVD: The Role of substrate Position

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates

Contact Info

Product

Resources

About

CVD Growth of MoS₂‐based Two‐dimensional Materials

Growth of Highly Crystalline and Large Scale Monolayer MoS₂ by CVD: The Role of substrate Position

Growth of Highly Crystalline and Large Scale Monolayer MoS₂ by CVD: The Role of substrate Position

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth