CVD Hydrophobic Lead Silicate Films

Li, P. ‐C.; Tsang, P. J.

doi:10.1149/1.2123748

Cited by 8 publications

(1 citation statement)

References 6 publications

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“…138 A cursory look at the available literature shows an average E(CVD, Pb) ≈ 22 kcal mol −1 for PbO, out of a count of 6,. [139][140][141][142][143][144] No clear pattern is emerging yet.…”

Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of Elemental Crystallogen Thin Films

Tomasini

2024

ECS J. Solid State Sci. Technol.

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A consolidation of the fundamentals of elemental crystallogen chemical vapor deposition (CVD) is a necessity in view of the extensive evidence accumulated over the last few decades. An in-depth understanding of deposition mechanisms via hydrides asks for a discerning understanding of molecular hydrogen dissociative adsorption, precursor thermal decomposition, and CVD growth rates. With those, a groundbreaking paradigm shift comes to light. GR activation energy E(GR) fingerprints the surface energy. SE ≈ 2E(GR) / (aa), where SE is surface energy, E(GR) activation energy, a lattice parameter. Hydride precursor thermal decomposition consistency with the corresponding solid growth kinetics is demonstrated. Heterogeneous TD kinetics captures a solid deposition and not a gas phase molecular reaction. Thermodynamic equilibrium is achieved during the heterogeneous thermal decomposition of silicon precursors. The popular split between mass-transfer and kinetic regimes is not supported by evidence. Three mechanisms are apparent. The first is controlled by a Si–H bond dissociation energy. The second is controlled by an H–H bond dissociation energy. The last is controlled by a Si–Si bond dissociation energy as lattice sites are sealed off with Si–H bonds.

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