CVD of GaN Films on Si(111). Chemically Clean Decomposition of Et2Ga(N3)·MeHNNH2

Abstract

Hexagonal GaN thin films are deposited on Si(111) from diethylazidogallium methylhydrazine adduct in a high vacuum CVD system and at a relatively low deposition temperature. Characterization of the GaN thin films using double crystal XRD indicates an FWHM of 0.4. Pole figure and photoluminescence analysis produces results comparable to that of high‐quality undoped h‐GaN films. XPS analysis shows the atomic ratio of Ga/N to be 1:0.94. A CVD mechanism is proposed on the basis of GC‐MS analysis suggesting precursor decomposition via the protonation of the ethyl group.

Adducts of organogallium chlorides with hydrazines and the formation of dimeric dialkylgallium hydrazides possessing different ring sizes

“…Generally, they were obtained by the treatment of trialkylgallium compounds [2][3][4][5][6] or stable gallium trihydride adducts [7] with different alkylhydrazines, by the reactions of dialkylgallium chlorides with lithium hydrazides [6][7][8] or by the replacement reaction between a hydrazine derivative and a gallium amide [9]. In some cases, gallium hydrazine adducts could be isolated as stable intermediates [5,6,10]. Furthermore, secondary reactions could be initiated on heating of the gallium hydrazides, which yielded interesting cage compounds by alkane elimination [4,5,7].…”

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

“…Thermal annealing of the films, however, could activate the dopants [8][9][10][11][12]. In the meantime, it was claimed that Be is more promising as dopant in GaN based on its smaller ionization energy of $60 meV while it is difficult to obtain high conductivities with Mg due to the relatively large ionization energy of 150-200 meV [13][14][15][16]. Beryllium may become a shallower acceptor in GaN due to the large electronegativity and absence of d-electrons [14].…”

“…However, in this paper, we report the growth of GaN in MBE using a new single GaN precursor source, Me 2 Ga (N 3 )(NH 2 t Bu), which contains a lot of hydrogen. One of the authors reported on the growth using a similar single precursor source [16], but the doping characteristics were not investigated. In this study, a comparison of the characteristics of Mg and Be as dopants in the GaN films grown with the molecular source is undertaken.…”

Non-stoichiometric AlOxFilms Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

“…In the previous CVD process using DMAI single precursor, Koh et al 6 reported the formation of Al 2 O 3 films on the Si substrates at high base pressure of 1 Pa. Different to our result shown in Figure 1, the atomic ratio by depthprofiling AES for the deposited films at 400 °C measured to be Al:O = 2:3, although exact oxidation state of Al by XPS was not compared.…”

“…[4][5][6] In particular, β-hydrogen elimination mechanism has been studied as a typical decomposition and chemical reaction process in the CVD processes of oxides with alkyl metal alkoxides (RMOR) as a single precursor. 4,5,7 Recently, semiconductor devices often require artificial sub-stoichiometric films in order to create or enhance unique physical and chemical properties of the films.…”