1981
DOI: 10.1063/1.92634
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Cyclotron resonance linewidth in selectively doped GaAs-AlxGa1−xAs heterojunctions

Abstract: Far-infrared cyclotron resonance (CR) experiments in a selectively doped AlxGa1−xAs -GaAs heterojunction are presented. Quantum oscillations appear in the CR line amplitude as theoretically predicted for a two-dimensional electron gas. The CR linewidth is found to depend on the infrared photon energy, and its correlation with the static mobility is interpreted in the framework of the Ando and Uemura’s model for a two-dimensional electron gas in a high magnetic field.

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Cited by 45 publications
(4 citation statements)
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“…In comparison with the previous experimental research studies as shown in ref. [65][66][67][68][69][70][71], our results are found to be consistent with them. In addition, the EAP interaction strength in the semiparabolic and parabolic QWs always augments as the conning frequency of the symmetric (parabolic) and asymmetric (semi-parabolic) potential increases for both kinds of materials GaAs and GaN; this is because the quantum connement intensity of the symmetric and asymmetric QW electrons will be stronger when increasing their conning frequencies.…”
Section: Papersupporting
confidence: 91%
“…In comparison with the previous experimental research studies as shown in ref. [65][66][67][68][69][70][71], our results are found to be consistent with them. In addition, the EAP interaction strength in the semiparabolic and parabolic QWs always augments as the conning frequency of the symmetric (parabolic) and asymmetric (semi-parabolic) potential increases for both kinds of materials GaAs and GaN; this is because the quantum connement intensity of the symmetric and asymmetric QW electrons will be stronger when increasing their conning frequencies.…”
Section: Papersupporting
confidence: 91%
“…Extrema of resistivity are observed at constant values of the perpendicular component of the magnetic field B 1 = B cos θ ( Fig. The half width at half amplitude ΔB 1/2 of the cyclotron resonance line confirmed the high mobility if one used the semi-empirical expression ΔB 1/2 = 0.63·μ −1/2 ·B 1/2 established in the case of GaAs-AlGaAs heterojunctions [Voisin et al 1981]. Fig.…”
Section: Observation Of the Two-dimensional Properties Of The Electromentioning
confidence: 73%
“…The fine structures in the ODCR signal are quantum oscillations. To interpret them we use the same ideas as those accounting for oscillations of conventional cyclotron resonance in a Si inversion layer [25] and a GaAs/Al x Ga 1−x As heterojunction [26]. The oscillations are caused by the variation of cyclotron resonance amplitude as Landau levels move through the Fermi level.…”
Section: Triangular Wellmentioning
confidence: 99%