1996
DOI: 10.1143/jpsj.65.2936
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Cyclotron Resonance of n-GaP in a Wide Far Infrared Region

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Cited by 5 publications
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“…We note that the Γ-band offset is ∼748 meV for this heterostructure, which is assumed to be grown on GaAs .94 P .06 substrate. Therefore, we take the form factor V S (0) of GaAs .68 P .32 as −0.039 eV so that 32 As heterostructure, we get a similar result as well. Therefore, we conclude that D, for a heterojunction that matches closely to one of the categories discussed above, can be expressed as…”
Section: Roughnessmentioning
confidence: 61%
“…We note that the Γ-band offset is ∼748 meV for this heterostructure, which is assumed to be grown on GaAs .94 P .06 substrate. Therefore, we take the form factor V S (0) of GaAs .68 P .32 as −0.039 eV so that 32 As heterostructure, we get a similar result as well. Therefore, we conclude that D, for a heterojunction that matches closely to one of the categories discussed above, can be expressed as…”
Section: Roughnessmentioning
confidence: 61%