1999
DOI: 10.1016/s0022-0248(99)00186-4
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Czochralski growth and characterization of piezoelectric single crystals with langasite structure: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LGN), and La3Ga5.5Ta0.5O14 (LGT)

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Cited by 194 publications
(88 citation statements)
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“…Etch pits are associated with dislocations and dislocation bundles and hence bring out the crystal quality [15,16]. The etch pits in GP crystals were examined using normal incident light type microscope.…”
Section: Etching Studiesmentioning
confidence: 99%
“…Etch pits are associated with dislocations and dislocation bundles and hence bring out the crystal quality [15,16]. The etch pits in GP crystals were examined using normal incident light type microscope.…”
Section: Etching Studiesmentioning
confidence: 99%
“…Besides crystal growth, J. Bohm et al reported some properties of LGT, LGS and LGN, such as electric conductivity, optical activity, piezoelectric and elastic properties [7,8]. In 2002, J. Stade et al reported electro-optic, piezoelectric and dielectric properties of LGT, LGS and LGN [9], and D. C. Malocha et al measured the LGT thermal coefficients of expansion and density [10].…”
Section: Introductionmentioning
confidence: 99%
“…The local symmetry of the sites is D 3 . Besides, there is one site of C 3 [(1/3, 2/3, z), Ga2 tetrahedron] symmetry and two sites of C 2 local symmetry [La (x, 0, 0), Thomson cube and [Ga3 (x, 0, 1/2), trigonal-pyramidal], where x = 0.42492(7) (La), x = 0.7617(1) (Ga3) and z = 0.4689(2) [5,6].…”
Section: Introductionmentioning
confidence: 99%