Czochralski growth of Ge1 − xSix alloy crystals

X-ray Fluorescence Holography Study on Si<SUB>1&minus;</SUB><i><SUB>x</SUB></i>Ge<i><SUB>x</SUB></i> Single Crystal

“…Bulk Si 1Àx Ge x crystals were grown by the Czochralski method, where x is a mole fraction of Ge. 14,15) The x values of the prepared samples were 0.001, 0.2, 0.5 and 0.8. A pure Ge single crystal wafer (Furuuchi Kagaku Co. Ltd.) was used as the standard sample.…”

Влияние Добавок Кремния На Свойства Монокристаллов Германия Для Инфракрасной Оптики

“…Основную легирующую добавку сурьму вводили в загрузку в форме лигатуры Ge−Sb. При введе-нии кремния в исходную загрузку в необходимом коли-честве, рассчитанном исходя из заданной его концентра-ции в кристалле (> 0.15 ат%) и значения эффективного коэффициента распределения [16], нарушалась моно-кристалличность получаемого материала. Повышение структурного качества кристаллов достигали с исполь-зованием способа постепенного насыщения расплава пу-тем введения кремния по способу, предложенному в [14].…”

Bulk single crystal growth of silicon-germanium

“…However, in the case of CZ growth, the first solid to form will have a slightly lower germanium content than indicated by the solidus. 2,5 In addition, as temperature is reduced, the amount of germanium in the solid will not increase as fast as indicated by the slope of the solidus. Uniformity of composition with crystal length can be improved by adding silicon to the liquid as growth occurs.…”

“…Although most have dealt with the preparation of thin films on silicon substrates, there has also been progress reported on the growth of various compositions of this alloy in bulk form using the Czochralski (CZ) [1][2][3][4][5][6][7][8][9] and other related methods. [10][11][12][13][14] SiGe alloys are of interest because they have higher mobility than silicon and can be produced with bandgaps between those of silicon and germanium.…”