Czochralski growth of oxides

Brandle, C. D.

doi:10.1016/j.jcrysgro.2003.12.044

Cited by 89 publications

(49 citation statements)

References 53 publications

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“…All these defects could limit considerably possible applications of the crystals. Thus, understanding of mechanisms of crystal lattice defects formation is very important for technology [24].…”

Section: The Czochralski Grown Oxide Materialsmentioning

confidence: 99%

“…It is worth noting that the occurrence of a particular defect structure depends not only on chemical composition, kinds of dopants and level of doping, but also on the growth conditions, such as the crystallization direction, an atmosphere in a growth chamber and a stage of crystallization process [24,25]. The studies show that X-ray topographic methods very sensitive to the crystal lattice deformation are suitable technique to reveal and identication of crystal lattice defects also in these materials.…”

Section: The Czochralski Grown Oxide Materialsmentioning

confidence: 99%

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X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

Lefeld‐Sosnowska

Malinowska

2013

Acta Phys. Pol. A

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X-ray diraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and Si1−xGex, (ii) selected binary REVO4 oxides and (iii) selected ternary ABCO4 oxides. The eect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation (Si1−xGex, solid solutions CaxSr1−xNdAlO4), defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form networks within the crystal core, cellular structure in the outer shell (SrLaGaO4), and variously developed block structure (in selected binary REVO4 crystals).

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Section: The Czochralski Grown Oxide Materialsmentioning

confidence: 99%

Section: The Czochralski Grown Oxide Materialsmentioning

confidence: 99%

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

Lefeld‐Sosnowska

Malinowska

2013

Acta Phys. Pol. A

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“…Growth of articial garnet crystals is well established for decades [36], and it is commonly accepted that growth of yttrium-aluminum garnet Y 3 Al 5 O 12 (YAG) from the melt can be successfully performed practically by any melt growth technique. From the point of view of crystal growth, YAG may be considered as typical crystalline substance that can play role of reference material.…”

Section: Garnetsmentioning

confidence: 99%

Czochralski Growth and Properties of Scintillating Crystals

2013

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The Czochralski method is one of the very few melt growth techniques that are industry friendly when considering the combination of quality, dimensions, and cost of the produced crystals suitable for their commercialization in scintillation detectors. This method is one of the oldest and most developed crystal growth processes regarding an adequate understanding the physical phenomena observed during solidication process and its practical expansion especially in the industrial scale production. It allows controllable formation of single-crystalline cylindrical ingots of various inorganic scintillation materials. The review summarizes recent progress on the Czochralski growth of a number of scintillation materials. The oxide crystals are mainly considered including the Ce and Pr--doped RE3Al5O12, RE = Y, Lu, aluminum garnets and newly discovered ultraecient Ce-doped Gd3(Ga,Al)5O12 multicomponent garnet, high density PbWO4 and CdWO4 tungstates, Ce-doped RE2SiO5, RE = Y, Gd, Lu, oxyorthosilicates and (Y,Lu)AlO3 aluminum perovskites and nally the classical Bi4Ge3O12 scintillator. Additionally, the details of the growth of other practically important non-oxide crystals, namely the Ce and Eu-doped LiCaAlF6 neutron and ultraecient Ce-doped LaBr3 scintillators, are discussed. The potential of novel micro-pulling down growth method is briey described in the combinatorial search for new scintillator materials. Selected luminescence and scintillation characteristics including the spectra and decay kinetics, light yield and radiation resistance are also illustrated and overviewed.

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“…lasers, substrates, scintillators, nonlinear and passive optical devices (Brandle, 2004). The Czochralski technique has become an important method of choice for the growth and production of many bulk oxide materials owing to the possibility of growing crystals with large size, core free with good optical quality, and a high concentration of dopant, e.g., Nd 3+ , Yb +3 with better homogeneity (Zhaobing et al, 2007;Albrecht et al, 1998).…”

Section: Introductionmentioning

confidence: 99%

The Influence of Atmosphere on Oxides Crystal Growth

Asadian¹

2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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Czochralski growth of oxides

Cited by 89 publications

References 53 publications

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

Czochralski Growth and Properties of Scintillating Crystals

The Influence of Atmosphere on Oxides Crystal Growth

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