D abstraction by H on Si(111) surfaces

Rate equation analysis of hydrogen uptake on Si (100) surfaces

“…Similar results were also recognized on the Si ͑111͒ surfaces. 11 The ABS reaction was found to be less T s sensitive as expected, but the AID reaction appeared strongly T s dependent. Therefore, the HA mechanism was ruled out.…”

“…while the indirect abstraction has been called AID ͑: adsorption-induced desorption͒, 11 and described as…”

“…So far, the abstraction reactions have been studied mainly from a kinetics point of view [9][10][11][12][13][14][15][16][17][18][19][20][21][22] rather than from a dynamics point of view. [23][24][25][26][27] Dinger, Lutterloh, and Küppers 9,20 reported that the reactions of Eqs.…”

Reactions of atomic oxygen with the D-covered Si(1 0 0) surfaces

“…Recombinative desorption of D adatoms from D-terminated Si surfaces can be also induced by H atoms [13,14]. The recent progress in the study of the H-induced D 2 desorptions from D-terminated Si(1 0 0) surfaces shows up that the desorption is induced by adsorption of H atoms onto a (3 · 1) monodeuteride/dideuteride domain on the (2 · 1) monodeuteride Si surfaces [15,16].…”

Response to “Comment on ‘Angular distributions of H-induced HD and D2 desorptions from the Si(100) surfaces’ [J. Chem. Phys. 128, 017101 (2008)]”

“…10 To reconcile these facts we have proposed a hot complex mechanism by which H atoms are first bound in the excited states of chemisorption in a DSi-SiD unit. 9,11 As evidenced by the efficient formation of dihydrides, 10 the reaction of H atoms with terminated Si atoms is one of the most important energy dissipation channels when H atoms are trapped on a Si surface. This energy dissipation should be seriously taken into account when the hopping of hot H atoms across D-terminated Si͑100͒ surfaces is treated.…”