D-Band × 8 Frequency Multiplier Using Complementary Differential Frequency Doubler

Park, Jae-Hyun; Yang, Dong-Yeol; Choi, Kwok Pui; Kim, Byung-Sung

doi:10.1109/lmwc.2022.3216019

Cited by 9 publications

(2 citation statements)

References 15 publications

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“…Table 2 compares the present D-band frequency multiplier with those reported for different transistor technologies [32], [33], [34], [35], [36], [37], [38], [39], [40], [41], [42], [43], [44], [45], [46], [47], [48], [49], [50], [51]. It can be seen that this work not only is the first D-band frequency multiplier based on the GaN HEMT technology, but also has the highest output power and the lowest fundamental leakage among all D-band frequency multipliers of any transistor technology.…”

Section: Discussionmentioning

confidence: 99%

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Li,

Fay,

Hwang

2024

IEEE J. Microw.

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We report a solid-state traveling-wave amplifier (TWA) realized through monolithic integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a stepped-impedance microstrip line as the input divider, but a low-loss, high-power-capacity SIW as the output combiner. The input signal is distributed to four GaN high-electron mobility transistors (HEMTs) evenly in magnitude but with 90°successive phase delays at the fundamental frequency. The HEMTs are distributed in the SIW in a period of a half wavelength at the second harmonic frequency, so that their outputs are combined coherently at the SIW output. To overcome the limited speed of the HEMTs, they are driven nonlinearly to generate second harmonics, and their fundamental outputs are suppressed with the SIW acting as a high-pass filter. The measured characteristics of the TWA agree with that simulated at the small-signal level, but exceeds that simulated at the large-signal level. For example, under an input of 15 dBm at 70 GHz, the output at 140 GHz is 38-dB above that at 70 GHz. Under an input around 70 GHz and 20 dBm, the output around 140 GHz is 14 dBm with a 3-dB bandwidth of 6%. This is not only the first D-band frequency multiplier based on the GaN HEMT technology, but also one with the highest output power and the lowest fundamental leakage among all D-band multipliers of different transistor technologies. This proof-of-principle demonstration opens the path to improve the power, gain and efficiency of sub-terahertz TWAs with higher-performance transistors and drive circuits. Although the demonstration is through monolithic integration, the approach is applicable to heterogeneous integration with the SIW and transistors fabricated on separate chips.

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Section: Discussionmentioning

confidence: 99%

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Li,

Fay,

Hwang

2024

IEEE J. Microw.

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“…8체배기를 제외한 수신 칩의 구조는 참고문헌 [6]에서 기발표한 결과와 그 림 2(b)는 8체배기의 회로도를 보여준다. 8체배기는 단일-차동 구조의 트랜스포머와 다중 위상 필터(poly phase filter) 기반의 상보형 차동 4체배기와 2체배기 구조로 설 계되었다 [7], [8] .…”

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A Ka-Band Radar Receiver with Built-in X8 Multiplier

Lee¹,

Yang²,

kang³

et al. 2023

J. Korean Inst. Electromagn. Eng. Sci.

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This paper proposes a 32 GHz band radar receiver with an X8 multiplier. The Ka-band Rx chip used in the receiver was fabricated by using a 28-nm complimentary metal-oxide-semiconductor (CMOS) process and its built-in X8 multiplier enables the chip to driven by a low reference signal of 4 GHz. The designed Rx chip was attached to the ground plane of a microstrip patch antenna and connected to the feedline via the bonding wire. The impedance matching circuit was implemented along the antenna feedline by considering the impedance changes caused by the bonding wire. The reference input signal, intermediate frequency (IF) output, and bias of the receiver were supplied on an FR4 substrate with a cavity, which enabled easy implementation of the Ka-band receiver module without requiring expensive and precise packaging technology. The performance of the fabricated receiver module was verified in an over-the-air (OTA) test.

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A Ka-Band Beam-Steering Radar Transmitter Using Active Multiplier and Coupled Delay Line Phase Shifter

Choi,

Song,

Lee

et al. 2024

IEEE Access

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D-Band × 8 Frequency Multiplier Using Complementary Differential Frequency Doubler

Cited by 9 publications

References 15 publications

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

A Ka-Band Radar Receiver with Built-in X8 Multiplier

A Ka-Band Beam-Steering Radar Transmitter Using Active Multiplier and Coupled Delay Line Phase Shifter

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