D.c. dielectric breakdown in SiO2 films prepared by low temperature chemical vapour deposition

Cobianu, C.; Pavelescu, C.

doi:10.1016/0040-6090(86)90378-0

Cited by 6 publications

(5 citation statements)

References 10 publications

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“…The surface processes represented by Eq. [2] and [3] can be grouped together to obtain the rate of formation of SiO2 as kdKaCti q2 - [10] 1.0 + KaCti where q2 is the rate of formation of SiO2 or the rate of depletion of the intermediate. For convenience qa is expressed as q2 = ksCti [11] where kdKa k5 - [12] 1.0 + KaCti It therefore suffices to apply Eq.…”

Section: Analytical Modelmentioning

confidence: 99%

“…There have been a number of experimental studies on the deposition of SiO2 from TEOS (2)(3)(4)(5)(6)(7)(8). It has been shown repeatedly that high quality SiO= films can be obtained from this process.…”

mentioning

confidence: 98%

“…The formed intermediate (I) then adsorbs to a vacant surface site (*) on the silicon surface Ko I + * ~ I* [2] The adsorbed intermediate (I*) migrates on the substrate surface to a reaction site and decomposes to SiO2 and an organic by-product (R2) kd I* ~ SiO2 + R2 + * [3] Let Kg and K, denote the equilibrium constants for the reactions [1] and [2]. Note that the equilibrium constant is the ratio of forward reaction rate constant to backward reaction rate constant.…”

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confidence: 99%

“…The traditional process of silane oxidation for depositing SiO2 films in the VLSI process technology is therefore being rapidly replaced by the process of pyrolysis of tetraethoxysilane (alkoxide of silicon). There have been a number of experimental studies on the deposition of SiO2 from TEOS (2)(3)(4)(5)(6)(7)(8). It has been shown repeatedly that high quality SiO= films can be obtained from this process.…”

mentioning

confidence: 99%

“…Let Kg and K, denote the equilibrium constants for the reactions [1] and [2]. Note that the equilibrium constant is the ratio of forward reaction rate constant to backward reaction rate constant.…”

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confidence: 99%

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Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO2 from Tetraethoxysilane

Kalidindi

Desu

1990

J. Electrochem. Soc.

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A theoretical model utilizing finite element methods is proposed to analyze low pressure chemical vapor deposition of SiO2 by pyrolysis of tetraethoxysilane (TEOS). This model incorporates both the homogeneous gas-phase reactions and the heterogeneous surface processes. The predicted values from the proposed model agreed very well with the experimental results. Besides accurately predicting the experimental data we have also estimated the forward and backward reaction rate constants for the gas-phase equilibrium reaction of TEOS.There is a growing interest in the chemical vapor deposition of oxides using metal alkoxides (1) due to process simplicity and other advantages such as: (i) relatively low temperatures of deposition to obtain high density films, (it) kinetically controlled deposition over a wide range of process parameters, which enables good step coverage and good uniformity, (iii) the process does not require addition of oxygen gas to yield stoichiometric oxides, due to the fact that more than required amount of oxygen is already present in reagent, (iv) fairly safe and less explosive reagents, and (iv) lack of need for special configuration for substrate positioning in the reactor, such as caged boats.The traditional process of silane oxidation for depositing SiO2 films in the VLSI process technology is therefore being rapidly replaced by the process of pyrolysis of tetraethoxysilane (alkoxide of silicon). There have been a number of experimental studies on the deposition of SiO2 from TEOS (2-8). It has been shown repeatedly that high quality SiO= films can be obtained from this process.In spite of the large amount of published data, very little is known about the kinetic mechanism of TEOS. Moreover, there are no theoretical models presented in the literature which take into account the kinetics, convective and diffusive mass transport in analyzing the deposition. Huppertz and Engl (7) modeled the SiO2 deposition from TEOS but neglected the convective mass transport. Moreover, their kinetic model does not agree well with published data in the literature (3, 4). Recently Desu (8) has shown that in the kinetics of TEOS, gas-phase decomposition is the rate controlling step.According to this kinetic model TEOS decomposes in the gas phase as Kg Si(C2H50)4 < =~ I + R1 [1] where I and R~ represent the intermediate and the organic by-product, respectively. The formed intermediate (I) then adsorbs to a vacant surface site (*) on the silicon surface Ko I + * ~ I* [2] The adsorbed intermediate (I*) migrates on the substrate surface to a reaction site and decomposes to SiO2 and an organic by-product (R2) kd I* ~ SiO2 + R2 + * [3] Let Kg and K, denote the equilibrium constants for the reactions [1] and [2]. Note that the equilibrium constant is the ratio of forward reaction rate constant to backward reaction rate constant. Let k, denote the rate constant for reaction [3]. The reactions [1]-[3] could be lumped into a singlerate equation for the deposition rate of SiO2 and is given as (8) Deposition rate = kdKa(KgCtg...

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