D. M. Palliser, Tudor York. Oxford: Oxford University Press, 1979. 327 pp. £12.50.

On the electrical characteristics of latent finger mark corrosion of brass

“…In fact, the logarithmic relationship in equation ( 1) is of the same form as the equation for the Fermi level in an intrinsic semiconductor and the shift in the Fermi level in an extrinsic semiconductor due to doping [21]. A similar shift in Fermi levels exists in the case of a metal-semiconductor contact, the alignment of Fermi levels giving rise to a contact potential difference [22,23]. Applied potential (V) With this in mind, we considered whether the contact might be displaying the characteristics of a rectifying metalsemiconductor contact through the formation of a contact potential difference, commonly known as a Schottky barrier [23][24][25].…”

“…A similar shift in Fermi levels exists in the case of a metal-semiconductor contact, the alignment of Fermi levels giving rise to a contact potential difference [22,23]. Applied potential (V) With this in mind, we considered whether the contact might be displaying the characteristics of a rectifying metalsemiconductor contact through the formation of a contact potential difference, commonly known as a Schottky barrier [23][24][25].…”

“…Rectifying metal-semiconductor contacts are commercially available as diodes (also known as Schottky barrier diodes) and these devices have particular application where a very fast switching action is required [23][24][25]. We replaced the sample brass disc with a commercially available Schottky rectifier, model MBR340, which was connected to the apparatus in a similar fashion to the test resistances described in section 2.2 above and V measured as a function of applied potential.…”

“…These electrical contacts need to be ohmic so as not to interfere with the characteristics of the rectifying metal-semiconductor contact. It is well known that the electrical properties of a metal-semiconductor contact depend on the magnitude of their respective work functions and the nature of the semiconductor material (n-type or p-type) [23][24][25]. Clearly, the results shown in section 3.2 and in figure 6 could be as a result of either of the two metal-semiconductor contacts (the brass to semiconductor or the platinum to semiconductor) exhibiting rectifying characteristics with the other contact being ohmic.…”

Electrical Properties of a p‐SnOx/n‐SnOx Diode on a Flexible Polyimide Substrate

“…V on refers to the value beyond which the carriers start to move across the junction in the forward direction. [ 31 ] To evaluate the relationship of the mechanical and electrical properties of the diode, the device was bent up to a 10 mm bending radius (as shown in Figure 1b). After manufacture of the diode, it was subjected to a bending test at a curvature radius of 50 mm for 20, 100, and 200 cycles.…”