D’yakonov–Perel and Elliot–Yafet spin relaxation rates in InGaAs/InAlAs multiple quantum wells at room temperature

Abstract

Room-temperature spin relaxation rates resulting from the D’yakonov–Perel (DP) and Elliot–Yafet (EY) mechanisms were determined by combining microscopic and macroscopic Kerr rotation measurements in narrow-gap (001) InGaAs/InAlAs quantum wells (QWs). Two samples with different DP relaxation rate were compared and we found that EY relaxation rate (3.80 GHz) was approximately double the value of the average DP relaxation rate even in the asymmetric QWs with large spin-orbit parameters. We also found that the anisotropy of spin relaxation time owing to the DP mechanism is weakened significantly in the system in which the EY mechanism dominates the spin relaxation.

Tuning Spin-Polarized Lifetime at High Carrier Density through Deformation Potential in Dion–Jacobson-Phase Perovskites

“…Conventional understanding based on the theory originally proposed by Bir, Aronov, and Pikus suggests that excitons are strongly scattered by the electron–hole exchange at high excitation concentrations, leading to a reduced spin lifetime . The BAP mechanism has been successfully employed to explain the diminished spin relaxation time in conventional semiconductors such as silicon, III–V semiconductors, and halide perovskites at high carrier or exciton concentrations. ,,, …”

“…32 The BAP mechanism has been successfully employed to explain the diminished spin relaxation time in conventional semiconductors such as silicon, III−V semiconductors, and halide perovskites at high carrier or exciton concentrations. 7,10,11,33 The Maialle−Silva−Sham (MSS) model is usually employed to analyze the exciton spin relaxation dynamics of perovskites. 20,34,35 The spin relaxation rate can be defined by an effective magnetic field ⟨Ω⟩ and the exciton scattering time τ p according to eq 2…”

Characterization of the out-of-plane Dresselhaus effective magnetic field in InGaAs/InAlAs (110) multiple quantum wells at room temperature

“…ext is the spin precession vector determined by external magnetic field B ext and the gtensor ĝ with three diagonal components g , xx g , yy and g , zz where m B is the Bohr magneton. Because both the Elliott-Yafet (EY) spin relaxation mechanism 15,16) and the DP mechanism in InGaAs QWs with a narrow band gap [17][18][19] 43 cm s ,…”