Proceedings SENSOR 2015 2015
DOI: 10.5162/sensor2015/d1.4
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D1.4 - Photovoltaic Cells with Increased Voltage Output for Optical Power Supply of Sensor Electronics

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Cited by 10 publications
(4 citation statements)
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References 17 publications
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“…However, the post-growth processing is rather more complex than in S-PVLPCs, with typically twice as many photolithography steps being required in HM-PVLPCs. 85 HM-PVLPC manufacturing consists of the definition of etched areas, metal contacts and interconnects, the formation of dielectric barriers, and the deposition of antireflection coatings. A critical step is the series interconnection between subcells.…”
Section: Manufacturing Processmentioning
confidence: 99%
“…However, the post-growth processing is rather more complex than in S-PVLPCs, with typically twice as many photolithography steps being required in HM-PVLPCs. 85 HM-PVLPC manufacturing consists of the definition of etched areas, metal contacts and interconnects, the formation of dielectric barriers, and the deposition of antireflection coatings. A critical step is the series interconnection between subcells.…”
Section: Manufacturing Processmentioning
confidence: 99%
“…Two strategies are available to realize this voltage compliance: either a multi-segment interconnection where the total available surface is divided into separated cells (as quarter in a pie) and connected in series; or a multi-junction approach where cells are vertically connected via tunnel junctions. Both have pros and cons 32 and the choice was made for a multi-segment approach, with an epitaxy less risky and less complex to implement.…”
Section: Methodsmentioning
confidence: 99%
“…At voltages around 0 V for all I-V curves a bending is observed, so that the shortcircuit current is significantly larger than the "saturated" current between about 1 V and 4 V. This behavior can be understood as follows: As the subcells' thicknesses are optimized for current matching at λ0 = 855 nm, the multi-junction structure is current mismatched when measured under 809 nm light. More precisely, the subcells' generated photocurrent densities decrease from top to bottom due to the increased absorptance at lower wavelengths [13,14]. As the junctions are connected in series, the bottom (J4) subcell's photo current is limiting the overall current of the device.…”
Section: A Measurements Under 809 Nm Lightmentioning
confidence: 99%