Damage accumulation in a material during prolonged high-temperature creep

Structural and magnetic properties of Ni2MnIn Heusler thin films grown on modulation-doped InAs heterostructures with metamorphic buffer

“…These may be the result of a creep process, i.e., a complex evolution of line defects (e.g. dislocations) into pores at the expense of stress [23][24][25][26]. In the reference Ni 2 MnIn/InAs (001) system, where the lattice mismatch is half as large, the formation of similar dislocation-induced pin-holes was observed starting at higher film thickness of 100 nm.…”