Damage accumulation mechanism in PIN diode limiters induced via multiple microwave pulses

Abstract

Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends. However, PIN diode limiters can be burnt out due to the microwave pulses coupling through the front-end of Rf receiver systems. The damage processes and mechanisms in PIN limiters are undoubtedly important topics. Here, the damage accumulation process in PIN limiters induced by external microwave pulses is studied via the injection experiments. The relationship between the degree of damage (i.e., insertion loss) in the limiters and number of the injected pulses is reported. The maximum temperature criterion for burnout in PIN limiters is theoretically predicted and experimentally verified not accurate, and it is further observed that the insertion loss of the PIN diode limiter changes significantly only if more energy is injected into the limiter via microwave pulses.

Impact of the structure on the thermal burnout effect induced by microwave pulses of PIN limiter diodes

“…The above phenomenon may be caused by the inconsistent damage criteria, Preliminary research results 21 show that it is not accurate to set the maximum temperature criterion in a semiconductor device as the melting point of the specific semiconductor material or electrodes to determine a burnout phenomenon in the simulation. Previous experiments 21 found that the I layer of the limiter has been basically burned through in the longitudinal direction when the insertion loss changed by 3 dB. Thus, using the hot spot reaching the melting point of the silicon penetrates the I layer as the damage criterion, the burnout power threshold of the limiters were re-simulated.…”

Impact of The Structure on The Thermal Burnout Effect Induced by Microwave Pulses of PIN Limiter Diodes

“…Preliminary research results 20 show that it is not accurate to set the maximum temperature criterion in a semiconductor device as the melting point of the specific semiconductor material or electrodes to determine a burnout phenomenon in the simulation. Previous experiments 20 found that the I layer of the limiter has been basically burned through in the longitudinal direction when the insertion loss changed by 3dB. Thus, using the hot spot reaching the melting point of the silicon penetrates the I layer as the damage criterion, the burnout power threshold of the limiters were re-simulated.…”

Plasma-based microwave power limitation in a printed transmission line: a self-consistent model compared with experimental data

“…PIN diodes generally have modest insertion loss and fast response times while offering small dimensions, relatively simple implementation, and low cost. However, their power handling may not be sufficient with regard to the HPM sources currently under development [11].…”