Damage and annealing recovery of boron-implanted ultra-shallow junction: The correlation between beam current and surface configuration

The article surveys the most recent achievements starting with the boron doping mechanism, mainly focused on doping in semiconductor materials such as Si, Ge, graphene, carbon nanotube, or other 2D materials. Frequently used doping methodologies are discussed, including ion implantation and solid-phase doping, mainly focused on recent developing techniques of monolayer doping. These doped materials’ structural, electronic, and chemical properties are addressed to understand the boron doping effect better. Theoretical and experimental information and data are used to support such atomic-level effects. Therefore, this review can provide valuable suggestions and guidelines for materials’ properties manipulation by boron doping for further research exploration.

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Damage and annealing recovery of boron-implanted ultra-shallow junction: The correlation between beam current and surface configuration

Cited by 3 publications

References 12 publications

Borided Materials

Borided Materials

Trends in Physical Techniques of Boriding

Boron Doping in Next-Generation Materials for Semiconductor Device

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