Damage buildup and the molecular effect in Si bombarded with PFn cluster ions

Titov, A.I.; Azarov, Alexander; Nikulina, L.M.; Kucheyev, S. O.

doi:10.1016/j.nimb.2006.12.004

Cited by 20 publications

(8 citation statements)

References 14 publications

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“…1(d) , we correlate the dependence of the (measured) damage level in the bulk ( n ) with (calculated) cascade densities ( ρ ). Previous studies for Si 2 , 4 , 9 , 41 , 42 , Ge 2 , GaN 8 , 43 , and SiC 27 , 44 have shown that the damage formation efficiency increases with increasing ρ .…”

Section: Resultsmentioning

confidence: 91%

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids

Wallace

Aji

Shao

et al. 2017

Sci Rep

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The buildup of radiation damage in ion-irradiated crystals often depends on the spatial distribution of atomic displacements within collision cascades. Although collision cascades have previously been described as fractals, the correlation of their fractal parameters with experimental observations of radiation damage buildup remains elusive. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 3C-SiC irradiated at 100 °C with ions of different masses. These data, together with results of previous studies of SiC and Si, are analyzed with a model of radiation damage formation which accounts for the fractal nature of collision cascades. Our emphasis is on the extraction of the effective defect diffusion length from pulsed beam measurements. Results show that, for both Si and SiC, collision cascades are mass fractals with fractal dimensions in the range of ~1–2, depending on ion mass, energy, and the depth from the sample surface. Within our fractal model, the effective defect diffusion length is ~10 nm for SiC and ~20 nm for Si, and it decreases with increasing cascade density. These results demonstrate a general method by which the fractal nature of collision cascades can be used to explain experimental observations and predict material’s response to radiation.

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Section: Resultsmentioning

confidence: 91%

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids

Wallace

Aji

Shao

et al. 2017

Sci Rep

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“…Implantation was carried out at RT at 7 • off the [0 0 0 1] direction in order to minimize channelling. As discussed in detail in [16,17], cascade density effects can be conveniently studied by PF n cluster ion irradiation when the following parameters are kept constant: ion energy normalized to amu 4 3 The choice of cluster ions (i.e. PF n with n = 0, 2 and 4 instead of more desirable mono-elemental clusters A n with wide ranges of cluster sizes n and ion species A) was due to experimental constraints of the ion accelerator used in this work.…”

Section: Methodsmentioning

confidence: 99%

“…This is not surprising since, due to the complexity of the threedimensional shape of collision cascades, even the definition of such a density is not straightforward. In particular, all the algorithms [2, [16][17][18] previously proposed to calculate cascade densities based on a ballistic Monte-Carlo approach [19] do not take into account the formation of subcascades, which strongly influences the results [20].…”

Section: Introductionmentioning

confidence: 99%

Energy spike effects in ion-bombarded GaN

Kucheyev

Azarov

Titov

et al. 2009

J. Phys. D: Appl. Phys.

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We study structural disorder in GaN bombarded at room temperature with 1.3 keV amu−1 PFn (n = 0, 2 and 4) cluster ions. Results are compared with our previous studies of irradiation with atomic ions of different masses. An algorithm for cascade density calculations that take into account the formation of subcascades is presented. Quantitative analysis of both new and previous data shows that an increase in the cascade density above a certain critical value results in a rapid increase in the rate of planar amorphization and the rate of damage buildup in the crystal bulk. Both such rates increase with decreasing sample temperature. This threshold-like behaviour suggests an important role of nonlinear energy spikes in the formation of stable implantation disorder in GaN. We also discuss the striking difference between cascade density effects in damage buildup in different semiconductors, including GaN, ZnO and Si.

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“…Importantly, a direct comparison and unambiguous interpretation of the results obtained for irradiation regimes with ions having different atomic masses may be challenging. Previously, it was demonstrated that the cascade density effects can be efficiently studied by comparing the disorder induced by atomic and cluster ions, with the implantation parameters adjusted in such a way that the only difference between these irradiation regimes is the discrepancy between the atomic and cluster ions locations 16 ; as schematically illustrated in Fig. 1 .…”

Section: Introductionmentioning

confidence: 99%

“…In the present paper, based on the formalism from Ref. 16 , we compare all three types of implants, as illustrated in Fig. 1 , to study the interplay between the disorder and strain in β-Ga 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

Interplay of the disorder and strain in gallium oxide

Azarov

Karaseov

Titov

et al. 2022

Sci Rep

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Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic β-Ga2O3 single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, X-ray diffraction and theoretical calculations show that the disorder accumulation in β-Ga2O3 exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the implanted region can be engineered by changing the disorder conditions in the near surface layer. The results can be used for better understanding of the radiation effects in β-Ga2O3 and imply that disorder/strain interplay provides an additional degree of freedom to maintain desirable strain in Ga2O3, potentially applicable to modify the rate of the polymorphic transitions in this material.

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Damage buildup and the molecular effect in Si bombarded with PFn cluster ions

Cited by 20 publications

References 14 publications

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids

Energy spike effects in ion-bombarded GaN

Interplay of the disorder and strain in gallium oxide

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