Damage characteristics of continuous-wave laser ablation triple-junction solar cells

Guo, Wei; Chang, Hao; Yu, Chenghao; Li, Ming Yu

doi:10.2351/7.0000671

Cited by 3 publications

(1 citation statement)

References 9 publications

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“…The experiments found that excessive power of pulsed lasers leads to a decrease in the peak power of solar cells [1][2][3]. Recently, research has been conducted on the irradiation damage of solar cells using continuous laser [4][5][6][7][8][9] and pulsed laser [10][11][12], accounting for the effects of different wavelengths [13][14][15], employing different pulse widths [16,17], and varying the laser parameters, such as laser fluence and frequency [18][19][20][21][22]. The damage effect of laser irradiation on silicon materials used in solar cells and its mechanism have been the focus of research [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Li,

Huang,

et al. 2024

Electronics

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This experimental study investigates the damage effects of nanosecond pulse laser irradiation on silicon solar cells. It encompasses the analysis of transient pulse signal waveform characteristics at the cells’ output and changes in electrical parameters, such as I–V curves before and after laser irradiation under varying laser fluence and background light intensities, and explores the underlying action mechanisms of laser irradiation. The study reveals that as the laser fluence increases up to 4.0 J/cm2, the peak value of the transient pulse signal increases by 47.5%, while the pulse width augments by 88.2% compared to the initial transient pulse signal. Furthermore, certain parameters, such as open-circuit voltage, short-circuit current, and peak power obtained, from the measured I–V curve indicate a threshold laser fluence for functional degradation of the solar cell at approximately 1.18 ± 0.42 J/cm2. Results obtained from laser irradiation under different background light intensities underscore the significant influence of background light on laser irradiation of silicon cells, with the most severe damage occurring in the absence of light. Moreover, findings from laser irradiation at multiple locations on the silicon cell demonstrate a linear decrease in the output voltage of the silicon cell with an increase in the number of irradiation points.

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Section: Introductionmentioning

confidence: 99%

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Li,

Huang,

et al. 2024

Electronics

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Thermal stability of triple-junction gallium arsenide cells

Feng,

Wang,

et al. 2024

Opt. Express

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Laser wireless power transmission (LWPT) systems have significant applications in the field of wireless energy transmission, including spacecraft sensor networks, satellite-to-satellite communication, and remote power supply. However, continuous laser exposure increases the temperature of the photovoltaic (PV) cells in the LWPT system, thus decreasing the electrical output performance. This work, which we believe is a new approach, is on the basis of a notch film designed by a combined merit function proposed to maintain the electrical output performance while under 1064-nm continuous laser irradiation. Moreover, the thermal stability of PV cells under laser irradiation was investigated, which revealed the recoverability of the open-circuit voltage (Voc) of the cells at different temperatures, and the thermal damage to cells was a gradual process. This process began with the vaporization of the encapsulation adhesive, followed by a decline in, but still recoverable and functional, electrical performance, and finally, the cell was completely damaged. The thermal stability of the PV cells coated with the notch film increased ten-fold compared to those without it. Furthermore, the correlation between the minimum Voc and maximum temperature of the cells with notch films of different performances was established. These investigations serve as references for further optimization of LWPT.

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Damage Characteristics Analysis of Laser Ablation Triple-Junction Solar Cells Based on Electroluminescence Characteristics

Guo,

Ye,

Chang

et al. 2024

Sensors

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To study the physical property effects of the laser on GaInP/GaAs/Ge solar cells and their sub-cell layers, a pulsed laser with a wavelength of 532 nm was used to irradiate the solar cells under various energy conditions. The working performance of the cell was measured with a source meter. The electroluminescence (EL) characteristics were assessed using an ordinary and an infrared camera. Based on the detailed balance theory, in the voltage characteristics of an ideal pristine cell, the GaInP layer made the most significant voltage contribution, followed by the GaAs layer, with the Ge layer contributing the least. When a bias voltage was applied to the pristine cell, the top GaInP cell emitted red light at 670 nm, the middle GaAs cell emitted near-infrared light at 926 nm, and the bottom Ge cell emitted infrared light at 1852 nm. In the experiment, the 532 nm laser wavelength within the response spectrum bands of the GaInP layer and the laser passed through the glass cover slip and directly interacted with the GaInP layer. The experimental results indicated that the GaInP layer first exhibited different degrees of damage under laser irradiation, and the cell voltage was substantially attenuated. The GaInP/GaAs/Ge solar cell showed a decrease in electrical and light emission characteristics. As the laser energy increased, the cell’s damage intensified, gradually leading to a loss of photoelectric conversion capability, the near-complete disappearance of red light emission, and a gradual degradation of near-infrared emission properties. The EL imaging revealed varying damage states across the triple-junction gallium arsenide solar cell’s sub-cells.

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Damage characteristics of continuous-wave laser ablation triple-junction solar cells

Cited by 3 publications

References 9 publications

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Thermal stability of triple-junction gallium arsenide cells

Damage Characteristics Analysis of Laser Ablation Triple-Junction Solar Cells Based on Electroluminescence Characteristics

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