Damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy implantation of nitrogen, oxygen, and fluorine ions

Abstract

The damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy implantation of carbon, nitrogen, oxygen, and fluorine ions are investigated as a function of the dose and substrate temperature during the implant process. The damage profiles were obtained by the Rutherford backscattering RBS-channeling technique, whereas the compositional profiles were performed by secondary ion mass spectrometry. The experimental results showed that the mechanisms governing the damage formation at the surface are strongly connected to the interaction of defects produced when the electronic energy loss exceeds a given threshold close to 220 eV/Å. In particular, we observed a damage pileup compatible with a growth of three-dimensional defect clusters

Kinetics of amorphization induced by swift heavy ions in α-quartz

“…4 we plot the dependence of the Avrami parameters on stopping power S e ; the model's parameters obtained from the fit are also shown in Table 2. The dependence is in accordance with that obtained for other dielectric materials [28][29][30] and confirms a general trend: n > 1 for stopping powers below threshold and decreases down to an asymptotic value, n = l, for high enough stopping powers (S e > S th ) [30]. In other words, one should remark that the exponent n remains above 1 even for stopping powers somewhat higher than the threshold value.…”

“…As for the amorphization kinetics in the electronic excitation regime, it is generally accepted that for low-enough stopping powers it is sigmoidal (Avrami-type), with a null or very small initial slope [27][28][29][30][31]. When the stopping powers are increased above the threshold value for track generation, then the Avrami kinetics turns into a Poisson behavior.…”

Analysis and optimization of propagation losses in LiNbO3 optical waveguides produced by swift heavy-ion irradiation

“…In the initial stage, increasing temperature up to around 300 or 350°C (depending on the waveguide type) causes a clear reduction in waveguide losses. This stage is very likely related to the removal of radiation induced coloring and defects centers, in accordance with results reported in the literature for waveguides prepared by different ion implantation processes [4,[12][13][14][15][16][17]. Another source of PL is the scattering at the interface separating the guiding and barrier layers.…”

Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review Optical Waveguides Fabricated by Ion Implantation/Irradiation: A Review

“…This is because two different kinds of damage are produced in this case: (a) in the near-surface region the damage is mainly produced by ionization and (b) at the end-of-range of the incoming ions the damage comes from the nuclear collision cascades. Most of the damage produced in the first layer can be eliminated by means of a low-temperature annealing whereas the damage of the buried layer requires higher annealing temperature (Bentini et al, 2004). Examples of this approach are the fabrication of planar and channel waveguides on LiNbO 3 using low-dose, few-MeV lithium (Raj & Kumar, 2010), carbon (Sugliani et al, 2010), fluorine (Jia et al, 2006) and oxygen Liu et al, 2007Liu et al, , 2008aSong et al, 2008;Tan et al, 2008a;Zhao et al, 2011b) ions.…”

“…For example, by irradiating LiNbO 3 with moderate ion fluences (2x10 14 cm -2 ) of F were obtained waveguides with nonlinear properties comparable to those of other LiNbO 3 guides www.intechopen.com Ion Implantation 268 (Bentini et al, 2004), having high confinement profiles clearly advantageous over other types of guides and losses around 1 dB/cm. Waveguides have also been achieved by using the ions O, Si and Mg (Hu et al, 2001;Bentini et al, 2002), and in the KGW crystal (García-Navarro et al, 2006), indicating the potential generality of the method.…”