2012
DOI: 10.1016/j.nimb.2011.10.065
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Damage formation in SiC ion implanted at 625K

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Cited by 8 publications
(4 citation statements)
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“…An analysis of the RBS data show that the damage is a mixture of point defect clusters and extended defects most probably dislocations [115]. This was confirmed by TEM [133]. Similar radiation hardness behavior of SiC during implantations above 300 ºC have also been reported for other heavy ions [20, 50, 96, 101, 103, 104, 115, 133 -138].…”
Section: Amorphizationsupporting
confidence: 75%
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“…An analysis of the RBS data show that the damage is a mixture of point defect clusters and extended defects most probably dislocations [115]. This was confirmed by TEM [133]. Similar radiation hardness behavior of SiC during implantations above 300 ºC have also been reported for other heavy ions [20, 50, 96, 101, 103, 104, 115, 133 -138].…”
Section: Amorphizationsupporting
confidence: 75%
“…Cracks can also occur in the coating layers which allow fission products to escape. Release of the noble gases, 88 Kr and 133 Xe, is usually the indicator for cracked layers in TRISO particles. [254 -256].…”
Section: Silver Diffusionmentioning
confidence: 99%
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