Damage-free CMP towards 32nm-node porous low-k (k = 1.6)/Cu integration

Kondo, Simon; Yoon, Bo Un; Lee, S.G.; Tokitoh, S.; Misawa, K.; Yoshie, Toru; Ohashi, N.; Kobayashi, Nozomu

doi:10.1109/vlsit.2004.1345397

Cited by 8 publications

(6 citation statements)

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“…This is because that the plasma process makes the PULK film surface become densification and introduce the silanol specie into the PULK film, which increases the dielectric constant value of the PULK film. Recently, some references have reported that the PULK film damages are caused by the dry etching/ashing [14,15], wet cleaning [16], PVD (Physical Vapor Deposition) [17] and CMP (Chemical mechanical polisher) [18,19]. The above mentioned damages not only cause the carbon loss of the PULK film but also make the PULK film performance convert from hydrophobe to hydrophilization.…”

Section: Introductionmentioning

confidence: 99%

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Zhou

Zhang

2015

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Zhou

Zhang

2015

Materials Science in Semiconductor Processing

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“…A direct-polish process has applied to the ULK without etch stop layer to reduce an effective dielectric constant in damascene interconnects [6]. However, a porous low-k SiCO:H film often suffers from chemical or mechanical damage during chemical mechanical polishing (CMP) because slurries and cleaning chemicals penetrates into its pores [7,6]. In this study, the directpolish process on organic non-porous fluorocarbon was demonstrated and an optimum direct-polish process condition by nitrogen plasma treatment (NPT) on its surface was investigated.…”

Section: Introductionmentioning

confidence: 99%

Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects

Nemoto

Tomita

et al. 2011

ECS Trans.

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A direct-polish process has applied to the ultra low-k dielectric without the etch stop layer to reduce effective dielectric constant in damascene interconnects. In this study, the direct-polish process on organic non-porous dielectric, fluorocarbon (k=2.2), was demonstrated and an optimum direct-polish process condition was investigated. Mechanical effect, not chemical effect, on fluorocarbon degraded electrical properties by changing of chemical structure of fluorocarbon. A surface plasma treatment of fluorocarbon before polishing was applied to avoid the degradation of electrical characteristics during direct-polish and this result revealed that the surface plasma treatment of fluorocarbon is a practical technique in advanced Cu interconnects.

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“…Filled via stacking is an inevitable element of the buildup printed circuit boards in order to achieve high density interconnections. 1,2 The vias are filled by the copper electrodeposition. Not only the builtup printed circuit boards, but also silicon chips are stacked with the through silicon via (TSV).…”

mentioning

confidence: 99%

“…[3][4][5] For both the filled via and TSV, the vias are filled by the copper electrodeposition. 2 Electrodeposition inhibition at the via outside and acceleration at the via bottom require desired current distributions to fill the vias without voids. The additives of an inhibitor, accelerator, leveler and halogen ion are necessary.…”

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confidence: 99%

TSV Fillings and Electrochemical Measurements of the Dialyl-amine Additive with Cl⁻and Br⁻

Kondo

Yamada

Yokoi

2015

J. Electrochem. Soc.

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The TSV filling using the dialyl-amine and the Br − and Cl − halogen ions to a copper electrodeposition bath is reported. The TSV bottom acceleration and TSV outside inhibition have been measured by an electrochemical method using the rotating disk electrode and numerical computation of the fluid dynamics. A perfect TSV filling is achieved with 1 ppm P(DAMA[HBr]/SO 2 ) + 1 ppm of Br − and the electrodeposited morphology is fine and bright. This shows acceleration at the lower rotation speeds of the rotating disk electrode and an inhibition at the higher speeds, if compared to 1 ppm P(DAMA[HCl]/SO 2 ) + Cl − 1 ppm. Br − 1 ppm shows a stronger inhibition at the higher rotation speeds, if compared to Cl − 1 ppm. The addition of SPS in addition to Br − 1 ppm shows acceleration at the lower speeds. No voids formed at the higher current density of 3.5 mA/cm 2 with SPS. © The Author Filled via stacking is an inevitable element of the buildup printed circuit boards in order to achieve high density interconnections. 1,2The vias are filled by the copper electrodeposition. Not only the builtup printed circuit boards, but also silicon chips are stacked with the through silicon via (TSV).3-5 For both the filled via and TSV, the vias are filled by the copper electrodeposition.2 Electrodeposition inhibition at the via outside and acceleration at the via bottom require desired current distributions to fill the vias without voids. The additives of an inhibitor, accelerator, leveler and halogen ion are necessary. 6,7 The halogen ion, in most cases Cl − , interaction with the inhibitor and accelerator is extremely important for the additive role. 8 The Cl − adsorbs at the copper electrodeposit and forms a cuprous electron bridge and binds with the polyethylene glycol (PEG). This Cl − , cuprous and PEG complex inhibit the copper electrodeposition.9,10 Completely different cyclic voltammetries (CV) have been reported for thiourea with and without Cl − by MS Kang. We focused on the dialyl-amine. M. Takeuchi reported that the Cl − counter ions adsorb on copper and inhibit the via outside electrodeposition. 21,22 However, no study currently exists on the effect of halogen ions with the dialyl-amine. In this report, the TSV fillings and electrochemical measurements have been compared with two halogen ions of Cl − and also Br − . ExperimentalThe basic bath consists of 130 × 10 3 ppm of CuSO 4 · 5H 2 O and 200 × 10 3 ppm of H 2 SO 4 . Figure 1 shows the structure of the dialyl- * Electrochemical Society Active Member. z E-mail: kkondo@chemeng.osakafu-u.ac.jp amines. (a) the P(DAMA[HBr]/SO 2 ) counter ion is Br − , and (b) the P(DAMA[HCl]/SO 2 ) counter ion is Cl − . The dialyl-amine concentration is 1 ppm and 1 and 50 ppm of the halogen are added.The TSV via has a diameter of 5 μm and depth of 40 μm. The stirring speed of the magnetic stirrer is 1000 rpm, the current density is 3 mA/cm 2 and the electrodeposition time is 60 min. The TSV substrates are imbedded in the resin and polished then observed by FE-SEM (Hitach, S-4300).COMSOL Multi...

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Damage-free CMP towards 32nm-node porous low-k (k = 1.6)/Cu integration

Cited by 8 publications

References 0 publications

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects

TSV Fillings and Electrochemical Measurements of the Dialyl-amine Additive with Cl⁻and Br⁻

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Damage-free CMP towards 32nm-node porous low-k (k = 1.6)/Cu integration

Cited by 8 publications

References 0 publications

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Preparation of porous ultra low k films using different sacrificial porogen precursors for 28nM technological node

Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects

TSV Fillings and Electrochemical Measurements of the Dialyl-amine Additive with Cl−and Br−

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TSV Fillings and Electrochemical Measurements of the Dialyl-amine Additive with Cl⁻and Br⁻