Damage production in semiconductor materials by a focused Ga+ ion beam

Abstract

The semiconductor materials Si, SiC, GaP, InP, GaAs, and InAs were irradiated at normal incidence and room temperature with a focused Ga ϩ ion beam in order to investigate the damage production at high current densities on the order of some A cm Ϫ2 . The samples were irradiated with ion fluences between 2ϫ10 13 and 2ϫ10 15 Ga ϩ cm Ϫ2 at an ion energy of 50 keV. The critical ion fluences for amorphization were determined by Rutherford backscattering spectrometry and by Raman spectroscopy. It was found that for SiC, GaP, and InP the number of displacements per atom necessary for amorphization is about the same one as that required for irradiation at low current densities, but in the cases of Si, GaAs, and InAs the high and low current density results differ remarkably. The reason for the different behavior of these materials is discussed.

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

“…2. The total disorder, f D , is defined as 1-A/A cry [28], where A is the total area under the principal first-order lines of the irradiated sample, and A cry is the corresponding area of the unirradiated crystal. In Fig.…”

Focused ion beam implantation of Ga in Si and Ge: fluence‐dependent retention and surface morphology

“…Since these semiconductors amorphize under keV irradiation at fluences of the order of 10 14 ions/cm 2 , [25,26] the crystalline nature of the Si and Ge specimens is expected to have an influence only for the lowest implantation fluences.…”

In-situ nanoindentation of epitaxial TiN/MgO (001) in a transmission electron microscope

“…Damage layers have been reported in numerous materials as a result of ion-beam thinning. 15 The implantation of the energetic Ga ϩ ions (typically 30 keV) is known to cause amorphization in a layer 30-nm thick in Si. 16 No studies have been conducted regarding Ga ϩ ion damage to TiN specifically, although the TRIM software predicts ϳ25% less lateral straggling for 30 keV Gaϩ ions in TiN as compared to Si.…”