Damage regularity and multifractal analysis of sol‐gel reflection coating of KDP crystal under low UV irradiation flux

Abstract

This study employed multifractal analysis to investigate the changes in surface morphology of SiO2 anti‐reflective coatings prepared on KDP substrates using the sol‐gel method, under various conditions of ultraviolet (UV) irradiance. The coatings were successfully fabricated, and the chemical structure of the SiO2 sol was comprehensively characterized using Solid‐State Nuclear Magnetic Resonance (SSNMR) technology. Under low UV irradiance (4 J/cm2), repeated experiments revealed a crack‐induced mechanism of surface fatigue damage. Utilizing Scanning Electron Microscopy (SEM), the study discovered the induction effect of initial crack defects in UV‐damaged coatings and established a damage model. Furthermore, Atomic Force Microscopy (AFM) was used to acquire images of the coatings' surface morphology at different damage levels, which were analyzed using the multifractal spectrum f(α). This analysis confirmed the multifractal nature of the coatings both before and after damage. This study identified significant effects of UV irradiation on the width of the multifractal spectrum and Δf, indicating that the SiO2 anti‐reflective coatings exhibit multifractal characteristics under various damage states. The coatings displayed a pattern of decreasing and then increasing singularity spectrum width, height distribution unevenness, and surface roughness with increasing damage. This study demonstrates that multifractal analysis is an effective tool for describing the complexity of the surface morphology of sol‐gel‐derived anti‐reflective coatings for the first time and for validating their multifractal properties across different stages of UV damage.Highlights Damage dynamic process of KDP crystal sol‐gel coating was described by SEM&AFM; The crack propagation mechanism of sol‐gel coating under UV radiation is proposed; The damage evolution of sol‐gel coating was described by multifractal analysis.