Damage to few-layer graphene sheets during electron field emission

Meng, Jianchao; Zhang, Lisheng; Fang, Yan

doi:10.1016/j.carbon.2017.07.072

Cited by 9 publications

(5 citation statements)

References 23 publications

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“…The highest value of 6727 was obtained for the M 1 morphology, which can be ascribed to most of the field emission sites and the lowest number of graphene layers. The 3-D NFLGs with M 2 and M 3 morphology also have a high β value, which is comparable to the reported V-FLG/V-NFLG from gaseous precursors. − …”

Section: Field Emission Propertiessupporting

confidence: 77%

“…It is worth noting that the material with the M 3 morphology has the smoothest curve due to its high stability of the field emission. Consequently, the 3-D NFLGs with M 1 and M 2 morphology in this work have E to values lower than those of most V-FLG/V-NFLGs prepared from the commonly used PECVD from gaseous precursors. − The excellent emission properties should be attributed to the nitrogen doping effect of the graphene matrix and its unique structural characteristics.…”

Section: Field Emission Propertiesmentioning

confidence: 84%

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Fullerene Transformed into a 3-D Structure of Nitrogen-Doped Few-Layer Graphene Sheets: Growth and Field Emission Properties

Fan

Chen

Zhou

et al. 2022

ACS Appl. Electron. Mater.

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3-D-structured nitrogen-doped few-layer graphene sheets (3-D NFLGs) have been prepared using a fullerene C 60 precursor combined with a microwave excited nitrogen plasma process. A deep understanding of the growth mechanism and regulating of morphology that can adjust the field emission properties is crucial for its widespread application. In this work, the detailed growth process and microstructure and the field emission properties of the as-synthesized vertical aligned 3-D NFLGs were studied. The growth of the 3-D NFLGs can be divided into three steps: evaporation of the C 60 , opening of the C 60 , and formation of the 3-D NFLGs. The growth process and morphology of the materials can be neatly regulated by changing the evaporating temperature of the C 60 , electron temperature of the plasma, and substrate temperature through our self-designed reaction equipment. Interestingly, the vertical 3-D NFLGs grew at a limited microwave power and nitrogen pressure and could be divided into three different morphological features, reflected in their distribution uniformity, interparietal distance, number of layers, and crystallinity, which exhibited different field emission properties. Additionally, the 3-D NFLGs were all in situ doped with ∼4% nitrogen atoms from nitrogen gas during the growth process, while different compositions of the nitrogen atoms were reflected in the graphitic N increasing with increasing nitrogen pressure. Furthermore, the field emission measurements show that the as-obtained vertical 3-D NFLGs exhibited the lowest turn-on electric field (1.30 V/μm@10 μA/cm 2 ) and threshold field (2.1 V/μm@1 mA/cm 2 ) at the M 1 morphology and the highest stability at the M 3 morphology. Remarkable field emission performance was obtained for the 3-D NFLGs with M 2 morphology, showing their great potential for field emission applications.

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Section: Field Emission Propertiessupporting

confidence: 77%

Section: Field Emission Propertiesmentioning

confidence: 84%

Fullerene Transformed into a 3-D Structure of Nitrogen-Doped Few-Layer Graphene Sheets: Growth and Field Emission Properties

Fan

Chen

Zhou

et al. 2022

ACS Appl. Electron. Mater.

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“…Furthermore, a high current density ( J ) of 8.3 mA/cm 2 was also achieved at only 2.57 V/μm applied field. Table lists the V-FLG/V-NFLG prepared by conventional PECVD from gaseous precursors. ,,,− Obviously, the obtained field emission in this work is superior to the majority of the reported ones. These excellent emission properties should be attributed to nitrogen doping effect of the graphene matrix and its unique structural characteristics, which decrease the screen effect.…”

Section: Resultsmentioning

confidence: 79%

“…Among these, PECVD is considered to be a feasible method to grow V-FLG directly on a substrate. V-FLG has been grown on various substrates using PECVD with a gaseous carbon-containing precursor (usually a hydrocarbon or fluorocarbon) by Malesevic et al, , Meng et al, and Kumar et al, among others, and the related growth mechanisms of V-FLG have been systematically studied. However, there have been very few reports on the growth of V-FLG from liquid or solid precursors that are nontoxic and that do not produce hazardous byproducts.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-Doped Few-Layer Graphene Grown Vertically on a Cu Substrate via C₆₀/Nitrogen Microwave Plasma and Its Field Emission Properties

et al. 2020

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Vertical few-layer graphene (V-FLG) sheet is expected to be a high field emitter due to its electrical properties and open surface with sharp edges. However, the complicated and tedious preparation method using gaseous carbon-containing precursor limited the universal application of V-FLG. This paper reports a novel, simple, and green method to prepare vertical nitrogen-doped few-layer graphene (V-NFLG) on the metal surfaces that exhibit excellent field emission properties. The V-NFLG was grown on a Cu substrate using C60 as a precursor with the help of a nitrogen microwave plasma. Growth and doping mechanisms for the few-layer graphene are suggested based on microwave plasma emission spectra of C60/nitrogen. The as-prepared NFLG exhibits remarkable field emission performance, with a high field enhancement factor (7430 at the high field), a low turn-on field (1.45 V/μm at 10 μA/cm2), and high stability (within ±4%), showing its great potential for field emission applications.

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“…Graphene, a subject of great interest for many domains of science and technology, has logically been considered for field emission (FE) sources simply because its single atomic edge has potentially nature's highest enhancement of electric field, thus opening perspectives for low voltage vacuum nanoelectronics. Though considerable work has been done [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] there is a dearth of measurements on well-characterized, individual single sheet graphene layers that can guide the community towards future developments. The published work is primarily on multiemitter films or individual multilayer emitters (see Ref.…”

mentioning

confidence: 99%

Narrow energy distributions of electrons emitted from clean graphene edges

Diehl

Choueib

Choubak³

et al. 2020

Phys. Rev. B

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This paper presents a study on electron field emission (FE) into ultrahigh vacuum (UHV) from a single, cleaned, graphene sheet where its single sheet nature has been carefully characterized and the emission zones are unambiguously the sheet edges. This definitive approach is in contrast to almost all other studies in the literature and can now guide theoretical work and applications. Our sample characterization starts with transmission electron microcopy imaging, Raman characterization, controlled mounting of individual flakes in a scanning electron microscope followed by in situ high temperature and high field treatments. Detailed FE characterization was carried out including current-voltage plots, FE microscopy, and electron energy spectroscopy during subsequent stages of sample cleaning, at room and liquid air temperatures. The full width at half maximum (FWHM) of the energy peak as well as its relative shift versus current and voltage were explored. A notable result is that the energy spectra are very narrow, ten times less than previously reported.

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Damage to few-layer graphene sheets during electron field emission

Cited by 9 publications

References 23 publications

Fullerene Transformed into a 3-D Structure of Nitrogen-Doped Few-Layer Graphene Sheets: Growth and Field Emission Properties

Fullerene Transformed into a 3-D Structure of Nitrogen-Doped Few-Layer Graphene Sheets: Growth and Field Emission Properties

Nitrogen-Doped Few-Layer Graphene Grown Vertically on a Cu Substrate via C₆₀/Nitrogen Microwave Plasma and Its Field Emission Properties

Narrow energy distributions of electrons emitted from clean graphene edges

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Damage to few-layer graphene sheets during electron field emission

Cited by 9 publications

References 23 publications

Fullerene Transformed into a 3-D Structure of Nitrogen-Doped Few-Layer Graphene Sheets: Growth and Field Emission Properties

Fullerene Transformed into a 3-D Structure of Nitrogen-Doped Few-Layer Graphene Sheets: Growth and Field Emission Properties

Nitrogen-Doped Few-Layer Graphene Grown Vertically on a Cu Substrate via C60/Nitrogen Microwave Plasma and Its Field Emission Properties

Narrow energy distributions of electrons emitted from clean graphene edges

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Nitrogen-Doped Few-Layer Graphene Grown Vertically on a Cu Substrate via C₆₀/Nitrogen Microwave Plasma and Its Field Emission Properties