Damage to solid-state photodiodes by vacuum ultraviolet radiation

Arp, Uwe; Shaw, Ping‐Shine; Gupta, Rajeev; Lykke, Keith R.

doi:10.1016/j.elspec.2005.01.236

Cited by 11 publications

(6 citation statements)

References 30 publications

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“…[14][15][16] Whereas BSI silicon detectors perform extremely well at visible and near infrared wavelengths, exposure to deep and far ultraviolet radiation causes surface damage and instabilities. The Extreme Ultraviolet Instrument on SOHO provides a dramatic illustration of the severity of UVinduced surface damage and the limits of conventional surface passivation methods.…”

Section: Surface Passivation Vs Surface Damage: Lessons From the Sohmentioning

confidence: 99%

Superlattice-doped silicon detectors: progress and prospects

et al. 2014

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In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 10 14 cm -2 . Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.

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Section: Surface Passivation Vs Surface Damage: Lessons From the Sohmentioning

confidence: 99%

Superlattice-doped silicon detectors: progress and prospects

et al. 2014

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“…At beamline 4, the stability of a wide range of state-of-the-art UV detectors was studied at several UV wavelengths. Shown in Figure 7 is the result of one of these studies showing the degradation in responsivity of detectors during exposure to an excimer laser beam at 157 nm [17,18]. In addition, measurement of the IQE at beamline 4 during the radiation damage process provided evidence for the damage mechanism for these photodiodes [17].…”

Section: Technical Reportmentioning

confidence: 96%

Technical Report: UV and VUV Radiometry Programs at the Synchrotron Ultraviolet Radiation Facility (SURF III)

Shaw

Arp

et al. 2006

Synchrotron Radiation News

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“…The dependence of backside charging methods on low interface trap densities carries a risk of failure in high radiation environments. Whereas high quality Si-SiO2 interfaces can be fabricated with exceptionally low surface trap densities, exposure to ionizing radiation is well known to break bonds in the oxide, thereby increasing the trap density at the Si-SiO2 interface [18][19][20]. Back-illuminated detectors are damaged by exposure to highenergy particles and photons in space telescopes and high energy physics experiments, as well as by prolonged exposure to deep and far ultraviolet (DUV and FUV) radiation.…”

Section: Degradation Of Ccd Qe and Stability Caused By Ionizing Radia...mentioning

confidence: 99%

2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy

Hoenk

Jewell

Kyne

et al. 2022

X-Ray, Optical, and Infrared Detectors for Astronomy X

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In this paper we review the physics and performance of back-illuminated CCDs. Models of back-illuminated CCDs are used to derive requirements for stable, strong surface passivation in space-relevant environments. Models and data are used to compare state-of-the-art surface passivation methods with 2D-doped surfaces. MBE growth of 2D-doped silicon on back-illuminated CCDs and CMOS image sensors enables near 100% charge collection efficiency with exceptional stability in space and other harsh environments. Lifetime tests performed on 2D-doped CMOS image sensors using pulsed DUV lasers have demonstrated the unique stability of 2D-doped detectors against high levels of radiation-induced surface damage. The insensitivity of 2D-doped detectors to Si-SiO2 traps has facilitated the development of a variety of coatings and filters with science-enabling capabilities for NASA instruments and missions in the far and near ultraviolet spectral range. We discuss the status and goals of a strategic partnership between JPL and Teledyne e2v for the certification of 2Ddoping processes, and report initial results from our collaboration.

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Damage to solid-state photodiodes by vacuum ultraviolet radiation

Cited by 11 publications

References 30 publications

Superlattice-doped silicon detectors: progress and prospects

Superlattice-doped silicon detectors: progress and prospects

Technical Report: UV and VUV Radiometry Programs at the Synchrotron Ultraviolet Radiation Facility (SURF III)

2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy

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