2006
DOI: 10.1016/j.tsf.2005.12.130
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Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

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Cited by 76 publications
(74 citation statements)
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“…A similar damp heat degradation behavior has been observed also for sputtered and CVD ZnO films by several authors. 4,[21][22][23][24][25][26] They propose that the diffusion of environmental gasses (e.g., oxygen, carbon dioxide, and water vapor) along the grain boundaries of ZnO films leads to a local increase in the density of traps states for the free carriers and in a higher potential barrier, which hinders the mobility of the carriers among the grains. 14 The carriers flow across the grain boundaries via thermionic emission and tunneling increases with the Fermi level, and therefore, films with higher carrier density are typically found to have more stable electrical properties in a harsh environment, as also shown in Figs.…”
Section: Resultsmentioning
confidence: 99%
“…A similar damp heat degradation behavior has been observed also for sputtered and CVD ZnO films by several authors. 4,[21][22][23][24][25][26] They propose that the diffusion of environmental gasses (e.g., oxygen, carbon dioxide, and water vapor) along the grain boundaries of ZnO films leads to a local increase in the density of traps states for the free carriers and in a higher potential barrier, which hinders the mobility of the carriers among the grains. 14 The carriers flow across the grain boundaries via thermionic emission and tunneling increases with the Fermi level, and therefore, films with higher carrier density are typically found to have more stable electrical properties in a harsh environment, as also shown in Figs.…”
Section: Resultsmentioning
confidence: 99%
“…[183] IO:H and AZO, on the contrary, showed poorer electrical stability under damp heat conditions mainly due to the introduction of water at grain boundaries. [183,184] In the case of IO:H it has been recently demonstrated that damp heat degradation is strongly linked to the hydrogen content in the films. IO:H films with hydrogen content lower than 5 at.% exhibit stable electrical properties after exposure to DH conditions.…”
Section: Stability Under Thermal and Humid Environmentsmentioning
confidence: 99%
“…[3][4][5][6] Research is continuing to improve the stability of AZO through different deposition techniques and conditions. [7][8][9][10][11][12] However, most degradation and performance studies of AZO …”
Section: Introductionmentioning
confidence: 99%