Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer

Wan, Luhong; Shao, Xin; Ma, Yingjie; Deng, Siqi; Liu, Yage; Cheng, Jifeng; Yuan, Gu; Li, Tao; Li, Xue

doi:10.1016/j.infrared.2020.103389

Cited by 9 publications

(2 citation statements)

References 29 publications

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“…Regarding photodiode type PD, 1/f noise is negligible without bias, explaining the observation in Figure 5d; 1/f noise exists with bias, and surface passivation like atomic layer deposition (ALD) Al 2 O 3 passivation can effectively reduce it. [31] As seen from Figure 5a-c, the dual interface passivated photodiode can detect broadband light at wavelengths from 300 to 770 nm, which corresponds to the 2D perovskite absorption spectrum range, and its peak EQE, R, and D* reach 90%, 0.39 A W −1 and 5.5 × 10 12 Jones, respectively. Photocurrents of the dual interface passivated photodiode at different light intensites of 532 nm laser measured without bias are presented in Figure 6a.…”

Section: Resultsmentioning

confidence: 93%

Highly Sensitive Self‐Powered 2D Perovskite Photodiodes with Dual Interface Passivations

Zhang

Guo

et al. 2022

Adv Funct Materials

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2D perovskites have attracted intensive attention by virtue of their excellent optical and electrical properties along with good stabilities. Herein, a highly sensitive self‐powered photodiode based on (PEA)2(MA)4Pb5I16 (PEA=C6H5(CH2)NH3, MA=CH3NH3) 2D perovskite is demonstrated by dual interface passivations. The Al2O3 bottom passivation can reduce the pinhole defects in the 2D perovskite film and suppress the trap‐related recombination loss, bringing forward much reduced dark current and increased photocurrent. The poly (methyl methacrylate) (PMMA) top passivation can encapsulate the 2D perovskite film and thus improve the stability of the device. These results show that the 2D perovskite‐based photodiode with dual interface passivations exhibits a large photo‐to‐dark current ratio of 107, a fast response speed of 597 ns and a linear dynamic range of 160 dB without bias. Responsivity (R) and detectivity (D*) respectively reach 0.36 A W−1 and 5.4 × 1012 Jones under 532 nm laser illumination at a power density of 1.5 nW cm−2. Moreover, the dual interface passivated device exhibits good stabilities. This study paves the road for developing low‐cost, low‐power, solution processed image sensors.

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Section: Resultsmentioning

confidence: 93%

Highly Sensitive Self‐Powered 2D Perovskite Photodiodes with Dual Interface Passivations

Zhang

Guo

et al. 2022

Adv Funct Materials

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“…In general, the 1/f noise is considered as the major influence of device performance, although many studies have been done before [3][4][5][6][7][8][9], it still has no precise or general physical model to perform in infrared device noise analysis. Baile Chen et al studied the origin of 1/f noise in Hg1-xCdxTe detectors and founded that the 1/f noise mainly comes from diffusion current (Idiff), generationrecombination current (Igr), and shunt current (Ishunt) [10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

Wang¹,

Zhu²,

Xu³

et al. 2021

Preprint

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In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

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Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Wang

Zhu

et al. 2022

Opt Quant Electron

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Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer

Cited by 9 publications

References 29 publications

Highly Sensitive Self‐Powered 2D Perovskite Photodiodes with Dual Interface Passivations

Highly Sensitive Self‐Powered 2D Perovskite Photodiodes with Dual Interface Passivations

Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

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