Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer

Yu, Tung‐Yuan; Pan, Fu‐Ming; Chang, Chun‐Ping; Hu, Tien; Chen, Jenn–Fang; Wang, Jia Feng; Lin, Chuan; Chen, Tsung Han; Chen, Te Ming

doi:10.1016/j.cap.2014.02.011

Cited by 10 publications

(2 citation statements)

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“…Clearly, the weak photocurrent produced by ZnO was greatly enhanced due to doping Se and RGO. Based on the charge transfer models reported [19,33,34] and the bandgap difference of our ZnO and Se, the photoelectric conversion mechanism is discussed as follows. First, the introduction of Se increased the visible light absorption, and red-shifted the absorption onset of ZnO (as shown in figure 3(A)).…”

Section: Photoelectric Conversionmentioning

confidence: 99%

One-step electrochemical synthesis and photoelectric conversion of a ZnO/Se/RGO composite

Wang¹,

Zhang²,

Niu³

et al. 2015

Semicond. Sci. Technol.

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Using Zn(NO 3 ) 2 , H 2 SeO 3 and graphene oxide as precursors, the zinc oxide/selenium/reduced graphene oxide (ZnO/Se/RGO) composite was facilely electrodeposited on the surface of indium tin oxide glass. The conditions for electrochemical synthesis such as electrodeposition potential and electrolyte composition were studied. The morphology and crystallization of the products as-prepared were characterized using scanning electron microscopy (SEM) and x-ray diffractometry (XRD) respectively. The light absorption and conductivity of the products were studied by UV-visible spectroscopy (UV-vis) and electrochemical impedance spectroscopy (EIS). Based on a series of experimental results, the photoelectrical conversion mechanism and effect factors of the products were explored. By means of synergistic action of n-type ZnO, p-type Se and conductive RGO, the ZnO/Se/RGO composite showed excellent photoelectric conversion under visible light irradiation.

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Section: Photoelectric Conversionmentioning

confidence: 99%

One-step electrochemical synthesis and photoelectric conversion of a ZnO/Se/RGO composite

Wang¹,

Zhang²,

Niu³

et al. 2015

Semicond. Sci. Technol.

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“…Various a-Se-based photodetector structures with different HBLs have been proposed and investigated [21], [22], [23], [24], [25]. As an example, in HARP TV camera tubes, nanometer-thin films of cerium oxide (CeO 2 ) have been utilized as an HBL [26], [27], [28].…”

Section: Introductionmentioning

confidence: 99%

Performance Evaluation of an Amorphous Selenium Photodetector at High Fields for Application Integration

et al. 2023

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Polyimide (PI) has been utilized as a hole-blocking layer (HBL) in high-resistivity photoconductors such as amorphous selenium (a-Se) and amorphous lead oxide (a-PbO). It prevents hole injection from the positively biased electrode and suppresses the dark current of the detector. To determine the performance parameters of an a-Se/PI detector for readout design and specification for different radiation detection applications, knowledge of the accurate voltage drop within the photoconductor is crucial. Here, we precisely determine the voltage drop across a-Se when interfaced with a thin layer of PI (1 µm) and characterize its temporal resolution (rise time and jitter), dynamic range, and quantum efficiency (QE) as a function of the electric field. The photoresponse of the detector is characterized using light-emitting diodes in the ultraviolet (UV, 355-400-nm wavelength) and visible (400-533-nm wavelength) regions of the light spectrum. We find the voltage drop across a-Se as 91% of the total applied voltage. This results in a QE near unity at 405 nm for corrected fields beginning at 45 V/µm. At fields of 50 V/µm, we observe rise times of 3.7 ns and jitter of 130 ps.

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Amorphous Selenium and Nanostructures

Tanaka

2019

Springer Handbook of Glass

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Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer

Cited by 10 publications

References 47 publications

One-step electrochemical synthesis and photoelectric conversion of a ZnO/Se/RGO composite

One-step electrochemical synthesis and photoelectric conversion of a ZnO/Se/RGO composite

Performance Evaluation of an Amorphous Selenium Photodetector at High Fields for Application Integration

Amorphous Selenium and Nanostructures

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