Das Schmelzen der Sulfide von Zink, Cadmium und Quecksilber

Tiede, Erich; Schleede, Arthur

doi:10.1002/cber.19200530917

Cited by 20 publications

(10 citation statements)

References 3 publications

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“…Bridgman growth under high inert gas pressure.--Tiede and Schleede (8) found that ZnS and CdS could be melted by retarding the decomposition with high nitrogen pressure. We found this method to work only for II-u compounds, where cation and anion are similar in volatility.…”

Section: Resistance Heater Methodsmentioning

confidence: 99%

“…Moreover, one observes the same emission if one reduces the radical cation of rubrene in a homogeneous reaction using some suitable reductant (5). Several studies have shown that this kind of chemiluminescent electrontransfer reaction is common among aromatic hydrocarbons and their derivatives and also among sev~eral heterocycles (2,(6)(7)(8). Since the reactants are most easily generated and studied electrochemically, this phenomenon has become known as "electrogenerated chemiluminescence" (ECL).…”

Section: Magnetic Field Effects On Some Fluid-solution Processes Invo...mentioning

confidence: 99%

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Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure

Fischer

1970

J. Electrochem. Soc.

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Wide-bandgap III-V and II-VI binary semiconductor crystals can be grown from the melt by a variety of methods, all requiring pressure. The necessary apparatus, from the simple to the sophisticated, has been investigated. Methods using resistance or rf heating, unsupported or supported ampoules of several materials, without or with high-pressure autoclave, under inert or active gas pressure, and the required control systems, are described. A broad description of the liquid encapsulation method is given, and construction details are contained in the figures. Special attention is given to the growth of gallium phosphide crystals and to the preparation of the starting material from the elements.(3)], and GaP [rap 1470~ (4)] decompose into their volatile components far below their melting points so that crystals can be grown from the melt only under pressure. Since large crystals can be grown from the melt faster and hence more inexpensively than by other methods, the need for initially costly pressure equipment is no longer a major deterrent.As usual in many fields, the long period of dormancy in which only a few devoted enthusiasts do the exploratory work, without much response, is over for crystal growth from the melt under pressure. Recently it became the focus of attention. This was caused by the coincidence of an industrial need for GaP crystals for electroluminescent diodes, triggered by the achievement of high efficiency in the visible, and the achievement of large GaP single crystals made by pulling through a boric oxide blanket under pressure.'Many of the results described here are scattered in government contract and conference reports so that a review of this increasingly important field is now timely. The results of other workers in this field are included. Most of the methods described below have actually been tested by us, so that their advantages and disadvantages can be related with authority.The paper is organized by describing the techniques in sequence of increasing complexity and refinement, which coincides frequently with the chronological order of their conception. Since materials synthesis is closely intermeshed with crystal growth, the synthesis methods are not described separately, but within the proper context. We treat Bridgman and Czochralski methods under high inert gas pressure and under cation or anion vapor pressure, the necessary equipment, control systems as they become necessary, and material synthesis from the elements. Since it is of prime importance now, we describe in detail crystal growth using liquid encapsulation, published by Metz, Miller and Mazelsky (5) in 1962, applied to GaP first by Bass and Oliver (6) at SERL, and amplified by our own results (7).The paper contains, besides numerous new scientific results, practical experiences and technological innovations, especially in the figures. The paper is confined to techniques and methods; properties of the prepared crystals have been and will be described elsewhere. Resistance Heater MethodsBridgman growth under high inert g...

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Section: Resistance Heater Methodsmentioning

confidence: 99%

Section: Magnetic Field Effects On Some Fluid-solution Processes Invo...mentioning

confidence: 99%

Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure

Fischer

1970

J. Electrochem. Soc.

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“…Electroluminescence (1,2) shows a characteristic slow decrease in light emission, in common with all other practical light sources, over long periods of operation of the lamp. Improvements in the maintenance of electroluminescence have kept pace with increases in brightness and efficiency and have required knowledge of the dependence of electroluminescence maintenance on phosphor properties, conditions of operation, and lamp construction.…”

Section: Electroluminescence Maintenancementioning

confidence: 99%

“…Tiede and Schleede (2) observed that the fluxing agent promotes crystal growth at low temperatures by lowering the melting point of the base material. The average particle size of the zinc sulfide crystallites increases during this treatment, and the final particle size depends on the processing conditions 1 Present address: Republic Aviation Corp., Farmingdale, N. Y. and the additives.…”

mentioning

confidence: 99%

“…The average particle size of the zinc sulfide crystallites increases during this treatment, and the final particle size depends on the processing conditions and the additives. Tiede and Schleede (2) observed that the fluxing agent promotes crystal growth at low temperatures by lowering the melting point of the base material. A few years later Schleede and Gantzckow (3) proposed that a thin film of the fluxing agent dissolves small particles of the base material, and that subsequent precipitation takes place on large particles with concomitant increase of the average particle diameter.…”

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confidence: 99%

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Particle Growth during Zinc Sulfide Phosphor Preparation

Kremheller¹,

Faria²

1960

J. Electrochem. Soc.

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The influence of processing conditions, such as time and temperature, and the effect of fluxing agents on the particle size and concomitant properties observed during zinc sulfide phosphor preparation are reported. The particle size increases exponentially with the reciprocal firing temperature and as the square root of the firing time when phosphors are prepared in open boats; the activation energy and frequency constant depend on the flux employed. A particle size anomaly is observed when zinc sulfide powder containing zinc chloride is processed near 1000°C in sealed quartz vials. This anomaly, which can be ascribed to the Hedvall effect, is accompanied by anomalies in chloride retention and crystal structure.

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Bericht über wichtige Untersuchungen der wissenschaftlichen anorganischen Experimentalchemie aus den Jahren 1917—1920

Koppel¹

1922

Angewandte Chemie

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Das Schmelzen der Sulfide von Zink, Cadmium und Quecksilber

Cited by 20 publications

References 3 publications

Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure

Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure

Particle Growth during Zinc Sulfide Phosphor Preparation

Bericht über wichtige Untersuchungen der wissenschaftlichen anorganischen Experimentalchemie aus den Jahren 1917—1920

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