Data of ALD Al 2 O 3 rear surface passivation, Al 2 O 3 PERC cell performance, and cell efficiency loss mechanisms of Al 2 O 3 PERC cell

Huang, Haojun; Lv, Jun; Bao, Yameng; Xuan, Rongwei; Sun, Shantong; Sneck, Sami; Li, Shuo; Modanese, Chiara; Savin, Hele; Wang, Aihua; Zhao, Jianhua

doi:10.1016/j.dib.2016.12.030

Cited by 11 publications

(5 citation statements)

References 4 publications

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“…has therefore been calculated for films deposited on SSP substrates after subtracting the thickness measured by SE prior to deposition. There is no literature describing the growth rate of the TMA + H 2 O + O 3 system, however, the growth rates are in close agreement with those observed for TMA + O 2 plasma [37], and slightly higher for each temperature than previously observed for just TMA + O 3 [38]. The apparent increased growth rate of HF-dipped samples relative to the no-HF samples is attributed to formation of SiO x during the initial ALD-cycles, as previously demonstrated by transmission electron microscopy (TEM) [2], [12], [13].…”

Section: Resultssupporting

confidence: 81%

“…Despite the significantly improved surface passivation over time of the samples deposited at 300 °C, they still perform worse than samples deposited at 200 °C, which appears to be the optimal deposition temperature when depositing on SC2last SiO x and taking long-term stability into account. 200 °C was also determined to be the optimal deposition temperature for HF-dipped samples, in agreement with previous studies [6], [38], [41].…”

Section: A Lifetime Measurementssupporting

confidence: 89%

“…We previously demonstrated this for samples deposited at 150 °C [32], and the present study indicates that this is generally true for deposition temperatures in the 150-300 °C range for the TMA + H 2 O + O 3 process. Importantly, this includes depositions at 200 °C, previously determined to be the optimal deposition temperature [6], [38], [41], where the no-HF sample exhibits more than three times lower J 0s post annealing, which CV and GV characteristics indicate is because of an almost three times lower D it and slightly increased Q fix .…”

Section: Discussionmentioning

confidence: 99%

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Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x

Getz

Povoli

Monakhov

2022

IEEE J. Photovoltaics

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Al 2 O 3 has rapidly become the surface passivation material of choice for p+ layers of solar cells because of its high negative fixed charge, good long-term and thermal stability, and no parasitic absorption. In this article, the surface saturation current density, fixed charge, and interface state density are compared for Al 2 O 3 deposited on Si substrates where the pre-existing out-of-thebox SiO x layer was not removed, with substrates where the SiO x was removed by hydrofluoric acid. The depositions are performed by atomic layer deposition at temperatures in the 150-300 °C range, using trimethylaluminium, H 2 O, and O 3 as precursors. The samples where the native oxide was not removed achieve a higher level of surface passivation for every tested deposition temperature, with the sample deposited at 200 °C exhibiting a surface saturation current density of only 0.9 fA/cm 2 after annealing, a fixed charge of −4.2 × 10 12 cm −2 , and a density of interface states of 9.8 × 10 9 cm −2 eV −1 . Capacitance and conductance voltage characteristics reveal a strong correlation between the surface saturation current density and the density of interface states and fixed charges. It is also determined that the long-term stability of the surface passivation depends on the deposition temperature, with higher deposition temperatures resulting in improved long-term stability. The results indicate that H-terminated Si prior to Al 2 O 3 deposition may have a detrimental effect on the surface passivation.

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Section: Resultssupporting

confidence: 81%

Section: A Lifetime Measurementssupporting

confidence: 89%

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x

Getz

Povoli

Monakhov

2022

IEEE J. Photovoltaics

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“…Furthermore, a passivation layer of Al 2 O 3 is deposited onto the high purity germanium substrate through Atomic Layer Deposition (ALD). With this ALD layer, Ge wafers can process similar to Si with SiO 2 [26].…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of 3D Trench Electrode Germanium Detector with Nested Complementary Cathodes

Wang,

Li,

Xiong

et al. 2023

Micromachines

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High-purity germanium detectors, widely employed in fields such as aerospace applications based on radiation detection principles, have garnered attention due to their broad detection range and fast response time. However, these detectors often require larger sensitive area volumes to achieve larger signals and higher detection efficiency. Additionally, the large distance between the electrodes contributes to an issue of incomplete charge collection, which significantly restricts their application in space applications. To enhance the electrical performance of high-purity germanium detectors, this study introduces a strategy: designing the detector’s cathode electrode into a 3D trench shape with nested complementary cathodes. This design greatly reduces the electrode spacing, endowing the detector with superior electrical characteristics, such as a smaller dead zone and improved charge collection efficiency. Performance simulations of the novel detector structure were conducted using the semiconductor device simulation software Sentaurus TCAD (2019.03). The simulation results confirmed that the nested complementary 3D trench electrode high-purity germanium detector exhibits excellent electrical features, including a larger sensitive area volume, rapid charge collection, and good cell isolations. This approach has the potential to effectively expand the application scenarios of high-purity germanium detectors. Depending on different operational environments and requirements, nested complementary 3D trench electrode high-purity germanium detectors of appropriate structural dimensions can be chosen. The experimental findings of this study hold a significant reference value for enhancing the overall structure of high purity germanium detectors and facilitating their practical application in the future.

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“…Large-area ALD processes have been developed for nonwafer substrates, often utilizing a high-throughput technique known as spatial ALD, with the largest published substrate size of 1.2 m. , Spatial ALD, in contrast to the temporal ALD process previously described, utilizes the same four step chemistry process by simultaneously running all four steps (TMA pulse, TMA purge, H 2 O pulse, and H 2 O purge) in separated localized zones of a reaction chamber while the substrate to be coated repeatedly moves across the four reaction zones to obtain a desired film thickness. Spatial ALD techniques are gaining popularity with large-area substrates in semiconductor and display manufacturing due to deposition rates several orders of magnitude faster than temporal ALD and scalability compatible with manufacturing line processes, led by companies such as Beneq and SoLayTec . While spatial ALD is a technically effective and industrially competitive solution for coating large flat substrates, they are not currently capable of coating large-area substrates with any curvature, such as concave or convex optical surfaces.…”

Section: Introductionmentioning

confidence: 99%

Scaling Atomic Layer Deposition to Astronomical Optic Sizes: Low-Temperature Aluminum Oxide in a Meter-Sized Chamber

Fryauf¹,

Phillips²,

Bolte³

et al. 2018

ACS Appl. Mater. Interfaces

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Atomic Layer Deposition (ALD) is very attractive for producing optical quality thin films, including transparent barrier films on metal-coated astronomical mirrors. To date, ALD of mirror coatings has been limited to relatively small-sized substrates. A new ALD tool has been designed, constructed, and tested to apply uniform protective coatings over a 0.9 m diameter substrate in a 1 m diameter scale deposition plane. The new tool, which we have named the meter scale ALD system (MSAS), employs a unique chamber design that isolates a large substrate surface to be coated by utilizing the substrate as a wall of the reaction chamber. The MSAS is mechanically designed to be rapidly reconfigurable for selective area coating of custom substrates with arbitrary shape, size, and permanent backside hardware attachments. The design, implementation, results, and future applications of this new tool are discussed for coating large-area optical substrates, specifically protective coatings for silver mirrors, and other future large astronomical optics. To demonstrate the potential of this new design, aluminum oxide was deposited by thermal ALD using trimethylaluminum and water at a low reaction temperature of 60 °C. Growth rate and uniformity, which are dependent on precursor pulse times and chamber purge times, show that the two half-reactions occur in a saturated regime, matching typical characteristics of ideal ALD behavior. Aluminum oxide deposition process parameters of the MSAS are compared with those of a conventional 100 mm wafer-scale ALD tool, and saturated ALD growth over the 0.9 m substrate is realized with a simple scaling factor applied to precursor pulse and purge times. This initial test shows that lateral thickness uniformity across a 0.9 m substrate is within 2.5% of the average film thickness, and simple steps to realize 1% uniformity have been identified for next growths. Results show promising application of transparent robust dielectric films as uniform coatings across large optical components scaled to meter-sized substrates.

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Data of ALD Al 2 O 3 rear surface passivation, Al 2 O 3 PERC cell performance, and cell efficiency loss mechanisms of Al 2 O 3 PERC cell

Cited by 11 publications

References 4 publications

Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x

Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x

Electrical Characteristics of 3D Trench Electrode Germanium Detector with Nested Complementary Cathodes

Scaling Atomic Layer Deposition to Astronomical Optic Sizes: Low-Temperature Aluminum Oxide in a Meter-Sized Chamber

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Data of ALD Al 2 O 3 rear surface passivation, Al 2 O 3 PERC cell performance, and cell efficiency loss mechanisms of Al 2 O 3 PERC cell

Cited by 11 publications

References 4 publications

Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx

Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx

Electrical Characteristics of 3D Trench Electrode Germanium Detector with Nested Complementary Cathodes

Scaling Atomic Layer Deposition to Astronomical Optic Sizes: Low-Temperature Aluminum Oxide in a Meter-Sized Chamber

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Product

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Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x

Improving ALD-Al₂O₃ Surface Passivation of Si Utilizing Pre-Existing SiO_x