Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP) 2014 International Topical Meetin 2014
DOI: 10.1109/mwp.2014.6994513
|View full text |Cite
|
Sign up to set email alerts
|

Data rate penalty for high-density photonic integrated circuits in advanced modulation formats

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2015
2015
2018
2018

Publication Types

Select...
2
1

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 4 publications
0
3
0
Order By: Relevance
“…The simulated built-in potential was estimated to be 0.71 eV at light-ON; however, different band slope behavior in the InP collector layer based on the electric field was recognized. In the case of the same doping level (I ab = p-type 1 × 10 18 cm -3 ) for condition (A) and (B), the steep band slope in the InP collector layer could be observed at I co = n-type 1 × 10 14 p-type 1 × 10 18 cm -3 and C: I ab = p-type 1 × 10 17 cm -3 ) in the collector layers, where I co = n-type 1 × 10 14 cm -3 , the flat band diagram in the collector layer was confirmed, because of Fermi-level shifting toward the center position, which is caused by the low carrier concentration (I ab = p-type 1 × 10 17 cm -3 ) Internal electric field distributions at 0 V for light-ON, which are simulated for (A)-(C), are shown in Fig. 4.…”
Section: Design Of Zero-bias Operational Utc-pdmentioning
confidence: 92%
See 1 more Smart Citation
“…The simulated built-in potential was estimated to be 0.71 eV at light-ON; however, different band slope behavior in the InP collector layer based on the electric field was recognized. In the case of the same doping level (I ab = p-type 1 × 10 18 cm -3 ) for condition (A) and (B), the steep band slope in the InP collector layer could be observed at I co = n-type 1 × 10 14 p-type 1 × 10 18 cm -3 and C: I ab = p-type 1 × 10 17 cm -3 ) in the collector layers, where I co = n-type 1 × 10 14 cm -3 , the flat band diagram in the collector layer was confirmed, because of Fermi-level shifting toward the center position, which is caused by the low carrier concentration (I ab = p-type 1 × 10 17 cm -3 ) Internal electric field distributions at 0 V for light-ON, which are simulated for (A)-(C), are shown in Fig. 4.…”
Section: Design Of Zero-bias Operational Utc-pdmentioning
confidence: 92%
“…Therefore, new high-density photonic integration and high-baud-rate transmission technologies must be designed and developed. Then, designs must be completed with care in order to avoid crosstalk issues and to optimize the tradeoffs between high-density integration and high-frequency transmission [14]. The optical crosstalk issue in high-density parallel photonic integrated circuits (PICs) can be predicted [15].…”
mentioning
confidence: 99%
“…These fundamental physical coupling mechanisms between neighboring components lead to electrical, thermal and optical crosstalk and are worthwhile investigating. They have gained recent attention in the research community, resulting in several studies [10], [11], [30]- [32]. In this section, we will summarize relevant results from our previous work regarding crosstalk effects in InP transmitters and detail how we applied the insight gained to the demonstrator transmitter design presented in this paper.…”
Section: Crosstalk Effects and Mitigationmentioning
confidence: 99%