Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

Shin, Seung Heon; Lee, S. H.; Kim, Y. S.; Heo, Jeong Wook; Bae, Dong-il; Hong, Sung Hoon; Park, S. H.; Lee, J. W.; Lee, J. G.; Oh, J. H.; Kim, M. S.; Cho, C. H.; Chung, Tae Young; Kim, Kinam

doi:10.3938/jkps.43.887

Cited by 4 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While some of the films considered here lead to compressive stress, others lead to tensile stress. If the region is filled with larger compressive stress oxide, the cell transistor threshold voltage increase is observed due to the higher stress inside AA [2]. Stress cancellation effects when multiple films are used can be adequately characterized by our methodology.…”

Section: Fig 1 Is a Schematic Top -Down View Of Aa In An 8fmentioning

confidence: 90%

“…This is a growing concern for sub-100nm gate length DRAM devices. Earlier work in this area is far from adequate in quantitatively understanding the stress distributions in high-density DRAM cells [1][2][3][4]. Therefore, it is necessary to quantitatively model and measure the stresses as well as analysis of its origin, which can provides us a guideline for future device design and process development.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Three-Dimensional Characterization and Modeling of Stress Distribution in High-Density DRAM Memory Cells

Hull

Yang

et al. 2004

Simulation of Semiconductor Processes and Devices 2004

View full text Add to dashboard Cite

The retention time characteristics in DRAM cells are strongly influenced by various leakage mechanisms near the storage node junction. In this work, we present a full three-dimensional analysis of stress distributions in and around the active area of high-density memory cells. We use a combination of high-resolution metrology analysis and 3D numerical modeling to provide quantitative estimates. Since shallowtrench isolation (STI) process used in high-density cells is one of the major contributors to stress, we study the effects of various materials used to fill the trench. Our electron diffraction contrast (EDC) methodology provides a spatial resolution on the order of 10 nm with sensitivity on of the order of tens of MPa and therefore useful for the analysis of scaled high density memory cells.

show abstract

Section: Fig 1 Is a Schematic Top -Down View Of Aa In An 8fmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%