Data transmission up to 10 Gbit/s with 1.3 µmwavelength InGaAsN VCSELs

Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy

“…In addition, large conduction band offset makes GaInNAs QWs attractive also for edge-emitting lasers with improved high-temperature performance. To date, very promising VCLs have been reported using both molecular-beam epitaxy 1,2 and metalorganic vapor-phase epitaxy ͑MOVPE͒. 3,4 However, there are still concerns regarding the luminescence efficiency and growth optimization.…”

Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

“…But the capability of mass production could be an issue. Recently, the InGaNAs 1.3 m VCSELs grown on GaAs substrates have been demonstrated with excellent characteristics [3,4]. However, to extend the InGaNAs gain to beyond 1.5 m is still rather difficult.…”

In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors

“…[8] In these material systems, the replacement of a tiny fraction (x ∼ 1 %) of arsenic (phosphorus) atoms by nitrogen atoms leads to highly nonlinear effects in the electronic properties of the host lattice. [9,10] These include a giant reduction in the bandgap energy and a deformation of the conduction-band structure, which render this material as having high potential for telecommunications through fiber-optic cables, [11] multijunction solar cells, [12] heterojunction bipolar transistors, [13] and terahertz applications. [14] Previous experiments have shown that post-growth irradiation of GaAs 1-x N x with atomic hydrogen leads to a complete reversal of the drastic bandgap reduction, as well as of other material parameters, caused by nitrogen incorporation.…”