DC-40 GHz SPDTs in 22 nm FD-SOI and Back-Gate Impact Study

Rack, Martin; Nyssens, Lucas; Wane, Sidina; Raskin, Jean‐Pierre

doi:10.1109/rfic49505.2020.9218317

Cited by 13 publications

(8 citation statements)

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“…In the lower frequency range RVT and SLVT switches outperform the BFMOAT ones thanks to an applied back gate bias, that enables them to achieve approximately 0.2 dB advantage in IL from DC to 20 GHz. The IL of SLVT with back-gate biasing is lower than that of BFMOAT up to around 34 GHz for the designs presented in [34] with matching, and up to around 26 GHz for the unmatched design. The applied bias that improves IL also simultaneously enhances P1dB and IIP3, by 1 dBm and 4 dBm, respectively.…”

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 83%

“…More recently, FD SOI is gaining interest for millimeter wave switches. In [34], the design of ultra-wideband SPDT switches (Fig. 6) targeting the Ka-band fabricated using the 22FDX® technology has been presented.…”

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

“…In [34], all devices have been compared at 28 GHz under both small-and large-signal analysis. At 28 GHz, the SLVT device outperforms both the RVT and BFMOAT in all smalland large-signal FoMs.…”

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

“…Measured insertion loss for the three SPDT switches. The applied backgate bias is Vbg1 = 3 V and Vbg2 = 0 V for the RVT and SLVT switches [34].…”

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

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Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, Partially Depleted Silicon-on-Insulator (SOI) MOSFET is the mainstream technology for RF SOI systems. Fully Depleted (FD) SOI MOSFET is foreseen as one of the most promising candidates for the development of future lower power wireless communication systems operating in the millimeter-wave range. The high frequency performances of FD SOI transistors are presented at room but also at cryogenic and high temperature. Recently published results for FD SOI switches and low noise amplifiers are summarized. And finally, the potential interest and challenges to move from standard to high resistivity FD SOI substrates are discussed.

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Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 83%

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

“…Measured insertion loss for the three SPDT switches. The applied backgate bias is Vbg1 = 3 V and Vbg2 = 0 V for the RVT and SLVT switches [34].…”

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

See 2 more Smart Citations

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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“…Secondly, the importance of moving from standard to high-resistivity Si substrate to reduce the crosstalk issues [17], interconnection RF losses and non-linearities [18] are presented. The non-linear model for the engineered trap-rich SOI substrate is detailed [19,20], and finally a brief review of SOI ICs in RF and millimeter-wave domain is given [21][22][23][24].…”

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confidence: 99%