DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

Morales–Sánchez, A.; Barreto, Jorge; Domı́nguez, Carlos; Aceves-Mijares, M.; Perálvarez, M.; Garrido, B.; Luna-López, J. A.

doi:10.1088/0957-4484/21/8/085710

Cited by 26 publications

(22 citation statements)

References 22 publications

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“…The value agrees well with that one estimated by electroluminescence [9]. The fact that the rise and fall time increase in the UV region, leads to think that the emission process is related to the sensor's response in the UV.…”

Section: Discussionsupporting

confidence: 90%

Silicon sensor with high sensibility from 200 to 1100 nm using embedded silicon nano-particles

Aceves-Mijares

Díaz-Méndez

Pedraza

et al. 2010

2010 53rd IEEE International Midwest Symposium on Circuits and Systems

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Silicon photodetectors have a limited response in the visible range. However, the silicon technology is currently the most important. Then there is the need to develop silicon sensors that are able to detect radiation in different ranges. In this paper, a sensor, that uses Si nano-particles, sensible in the whole range form 200 to 1100 nm is characterized in both DC and AC signal. A discussion is done that relates the sensibility of the sensor with the SRO characteristics.

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Section: Discussionsupporting

confidence: 90%

Silicon sensor with high sensibility from 200 to 1100 nm using embedded silicon nano-particles

Aceves-Mijares

Díaz-Méndez

Pedraza

et al. 2010

2010 53rd IEEE International Midwest Symposium on Circuits and Systems

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“…This behavior was observed by our group before in SRO ilms with Ro =30, and it was related to the creation and annihilation of preferential conductive paths generated possibly by adjacent stable Si-nps and unstable silicon nanoclusters (Si-ncls) through structural changes and by the possible creation of defects (breaking of Si-Si bonds) [70,79,80]. Indeed, a clear correlation between current jumps/drops and EL dots appearing/ disappearing on the LEC surface was observed [70,79,80]. This RS behavior is independent on the thermal annealing temperature [46].…”

Section: Silicon-rich Oxide (Sro)-lecssupporting

confidence: 55%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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“…Currently, a number of approaches to Si-NP fabrication have been developed: chemical [9,10], mechanochemical [11]; plasma-chemical [12]; electrochemical [13]; ion implantation [14]; magnetron sputtering [15]; laser ablation of a silicon target in supercritical fluids [16]; laser vaporization-controlled condensation (LVCC) technique, which has been described in several publications [17,18] and others (for the details see monographs [1,2]. We synthesize the core/shell Si/SiO x nanoparticles having an intense redinfrared photoluminescence by cost-effective and potentially scalable method of synthesis-thermal disproportionation of silicon monoxide in air at temperatures from 300 to 1350°C [8,19,20].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of photoluminescent Si/SiO x core/shell nanoparticles by thermal disproportionation of SiO: structural and spectral characterization

et al. 2014

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Core/shell Si/SiO x nanoparticles (Si/SiO x -NP) having bright red-infrared photoluminescence were obtained by a three-stage synthesis based on the thermal disproportionation of microdispersed SiO. Transformation patterns of structure and spectroscopic properties of the material during passage through all process stages (starting from initial SiO microparticles and up to the Si/SiO x -NP sols) have been revealed by using Raman, photoluminescence and ESR spectroscopy, XPS, XRD, and electron microscopy. Thermal annealing of SiO microparticles (stage I) results in formation of amorphous-crystalline Si nanophase in the matrix of SiO 2 , as well as generation of paramagnetic P b centres with the concentration up to 4 9 10 18 particles/g. At the annealing temperature, T an [ 900°C, a rapid growth of nanocrystal sizes takes place, and, simultaneously, a rapid growth of paramagnetic P b centre concentration occurs. Elimination of SiO 2 from the annealed sample by etching in HF (stage II) stimulates further crystallization of amorphous-crystalline core, caused by stress relaxation inside the Si core when removing SiO 2 matrix. Functionalization of nanoparticle surface (stage III) allows obtaining core/shell Si/SiO x -NP with a bright red-infrared photoluminescence and their sols. Average size of the crystalline Si core increases from 4.7 to 11.1 nm when T an at the stage I rises from 350 to 1100°C. At relatively low T an = 350°C, the nanoparticles with monocrystalline Si cores are mainly formed, while at T an [ 1100°C, a large number of polycrystalline Si nanoparticles are also observed. Our TEM images have revealed the existence of monocrystalline Si nanoparticles having significantly different contrast even at comparable nanoparticle sizes. We attribute that to the formation of both bulk (with a high TEM contrast) and flat (2D) Si nanocrystals (with a low TEM contrast) in the course of SiO annealing.

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DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

Cited by 26 publications

References 22 publications

Silicon sensor with high sensibility from 200 to 1100 nm using embedded silicon nano-particles

Silicon sensor with high sensibility from 200 to 1100 nm using embedded silicon nano-particles

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Synthesis of photoluminescent Si/SiO x core/shell nanoparticles by thermal disproportionation of SiO: structural and spectral characterization

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