DC and small‐signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

Abstract

SUMMARYThis paper describes the DC and small-signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter-base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff and maximum frequencies but significant differences are observed in other characteristics such as base-emitter turn-on voltage, saturation collector-emitter voltage, forward current gain, maximum transducer gain and maximum stable gain.