DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths

Yang, Shih-Sheng; Hsin, Yue-Ming

doi:10.1109/rfit52905.2021.9565233

2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) 2021

DOI: 10.1109/rfit52905.2021.9565233

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DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths

Shih-Sheng Yang

Yue-Ming Hsin

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DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths

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