DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure

Kwak, Hyeon-Tak; Jang, Kyu-Won; Kim, Hyun-Jung; Lee, Sang‐Heung; Lim, Jong−Won

doi:10.1166/jnn.2019.16004

Cited by 6 publications

(4 citation statements)

References 1 publication

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“…Various field plate (FP) structures in GaN-based HEMTs have been mainly used under high-power conditions. The FP structures redistribute concentrated electric fields at the drain-side gate edge when high voltage is applied, thereby improving the breakdown voltage (

) [ 8 , 9 ]. Additionally, we symmetrically increased the gate-head-top (

) and gate-head-bottom (

) lengths of the AlGaN/GaN HEMT in this study.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Kang,

Choi,

Kim

et al. 2023

Micromachines

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In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (fT) and maximum frequency (fmax) degraded. To minimize the degradation of fT and fmax, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest fT and fmax were obtained at a 6 nm recessed structure. The fT and fmax of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.

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) [ 8 , 9 ]. Additionally, we symmetrically increased the gate-head-top (

) and gate-head-bottom (

) lengths of the AlGaN/GaN HEMT in this study.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Kang,

Choi,

Kim

et al. 2023

Micromachines

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“…The SHEs have hindered the manufacturing of high-quality HEMTs that become dominant when drain bias is applied, leading to sub-optimal breakdowns. Extensive researches have been conducted to overcome the SHEs by various research groups using advanced field plate structures, excessive thermal stability material, and air-water cooling device framework [15][16][17][18][19]. However, even after lots of research, an optimized device has not been proposed to meet the market power-requirements.…”

Section: Introductionmentioning

confidence: 99%

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Murugapandiyan

Nirmal

Hasan³

et al. 2021

Materials Science and Engineering: B

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“…To be specific, phonon scattering enhanced by SHE degrades the direct current (DC) and radio frequency (RF) characteristics of HEMTs. Therefore, to control such influences, research on field plates, high thermal conductivity materials, and air-water cooling systems has been actively conducted [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

et al. 2019

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.

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DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure

Cited by 6 publications

References 1 publication

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

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