DC conduction behavior of Bi3.15Nd0.85Ti3O12 thin films grown by RF-magnetron sputtering

Abstract

The Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) thin films were deposited on Pt(111)/Ti/SiO 2 /Si substrates by using RFmagnetron sputtering method and studied the ferroelectric and leakage current charateristics. The polarization -electric field (P-E) hysteresis loops of BNT film was well saturated with the remnant polarization (2P r ) of 29.8 μC/cm 2 and a coercive field (2E c ) of 121 kV/cm. The leakage current density -electric field (J-E) characteristics of the Pt/BNT/Pt capacitor reveals the presence of two conduction region, having Ohmic behavior at low electric field (below 50 kV/cm) and Schottky-emission or Poole-Frenkel emission at high electric field (above 60 kV/cm). The barrier height and trapped level of BNT films are estimated to be 1.11 eV and 0.90 eV, respectively.

Study on a Metal–Insulator–Silicon Hydrogen Sensor With LaTiON as Gate Insulator

“…Since TiO 2 has much higher κ value (∼75 as reported in [32]) than La 2 O 3 adding Ti to La 2 O 3 in this work should result in a higher κ value, e.g. 33 in [33]. However, due to inevitable growth of a low-κ layer at the LaTiON/substrate interface during the annealing step, the effective κ value of the two layers combined is lower, e.g.…”

“…Therefore, the κ value of ∼ 20 for our samples extracted from the Poole Frenkel model is a reasonable value. In this study, the conduction mechanism of the LaTiON films is also analyzed by fitting the I -V data to the thermionic emission and Poole-Frenkel emission models with the method used by Lee et al [33]. By extrapolating the data with respect to 1/T, the barrier height and trap center level are calculated and their values are as given in Table III.…”

Hydrothermally formed functional niobium oxide doped tungsten nanorods

“…In addition to the aforementioned mechanism, carriers can flow over the energy barrier by acquiring sufficient thermal energy from their environment such that they can bypass the influence of the traps [68,69]. Thermionic emission (TE) theory postulates that only energetic carriers (those which have energies equal to or larger than the conduction band energy) can contribute to the overall flow of current.…”